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SEMIX71GD12E4S PDF预览

SEMIX71GD12E4S

更新时间: 2024-11-06 06:11:07
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
5页 384K
描述
Trench IGBT Modules

SEMIX71GD12E4S 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-XUFM-X13针数:20
Reach Compliance Code:compliant风险等级:5.72
其他特性:UL RECOGNIZED外壳连接:ISOLATED
最大集电极电流 (IC):115 A集电极-发射极最大电压:1200 V
配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X13元件数量:6
端子数量:13最高工作温度:175 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):512 ns
标称接通时间 (ton):195 nsVCEsat-Max:2.1 V
Base Number Matches:1

SEMIX71GD12E4S 数据手册

 浏览型号SEMIX71GD12E4S的Datasheet PDF文件第2页浏览型号SEMIX71GD12E4S的Datasheet PDF文件第3页浏览型号SEMIX71GD12E4S的Datasheet PDF文件第4页浏览型号SEMIX71GD12E4S的Datasheet PDF文件第5页 
SEMiX71GD12E4s  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
IGBT  
VCES  
1200  
115  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
IC  
Tj = 175 °C  
88  
ICnom  
75  
ICRM  
ICRM = 3xICnom  
225  
VGES  
-20 ... 20  
SEMiX®13  
VCC = 800 V  
VGE 20 V  
VCES 1200 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
Trench IGBT Modules  
SEMiX71GD12E4s  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
97  
73  
A
A
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
75  
A
IFRM = 3xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
225  
A
Features  
• Homogeneous Si  
• Trench = Trenchgate technology  
• VCE(sat) with positive temperature  
coefficient  
• High short circuit capability  
• UL recognised file no. E63532  
429  
A
-40 ... 175  
°C  
Module  
It(RMS)  
Tstg  
600  
-40 ... 125  
4000  
A
°C  
V
Visol  
AC sinus 50Hz, t = 1 min  
Typical Applications  
• AC inverter drives  
• UPS  
• Electronic Welding  
Characteristics  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
Remarks  
• Case temperature limited to TC=125°C  
max.  
• Product reliability results are valid for  
Tj=150°C  
IC = 75 A  
VCE(sat)  
Tj = 25 °C  
1.85  
2.25  
2.1  
V
V
V
GE = 15 V  
Tj = 150 °C  
2.45  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.8  
0.7  
0.9  
0.8  
V
V
14.0  
20.7  
5.8  
16.0  
22.0  
6.5  
mΩ  
mΩ  
V
VGE = 15 V  
VGE(th)  
ICES  
VGE=VCE, IC = 3 mA  
VGE = 0 V  
5
Tj = 25 °C  
Tj = 150 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
0.1  
0.3  
mA  
mA  
nF  
nF  
nF  
nC  
V
CE = 1200 V  
Cies  
Coes  
Cres  
QG  
4.4  
0.29  
0.24  
425  
10.00  
160  
35  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
RGint  
td(on)  
tr  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
ns  
VCC = 600 V  
IC = 75 A  
ns  
Eon  
td(off)  
tf  
7.5  
mJ  
ns  
RG on = 1 Ω  
433  
79  
R
G off = 1 Ω  
ns  
di/dton = 2500 A/µs  
di/dtoff = 930 A/µs  
Eoff  
Rth(j-c)  
9
mJ  
K/W  
per IGBT  
0.38  
GD  
© by SEMIKRON  
Rev. 1 – 20.02.2009  
1

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