Datasheet > SEMIX252GB126HDS_08

SEMIX252GB126HDS_08

更新时间： 2022-12-18 08:59:00

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	358K
描述
Trench IGBT Modules

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SEMIX252GB126HDS_08 数据手册

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SEMiX252GB126HDs

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

1200

242

T_c= 25 °C

T_c= 80 °C

I_C

T_j= 150 °C

170

I_Cnom

I_CRM

V_GES

150

I_CRM= 2xI_Cnom

300

-20 ... 20

SEMiX^®2s

V_CC= 600 V

V_GE≤ 20 V

T_j= 125 °C

t_psc

µs

°C

V_CES≤ 1200 V

Trench IGBT Modules

T_j

-40 ... 150

Inverse diode

SEMiX252GB126HDs

T_c= 25 °C

T_c= 80 °C

I_F

228

158

T_j= 150 °C

Preliminary Data

I_Fnom

I_FRM

I_FSM

T_j

150

Features

• Homogeneous Si

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

• High short circuit capability

• UL recognised file no. E63532

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

300

1000

-40 ... 150

°C

Module

I_t(RMS)

T_stg

600

-40 ... 125

4000

°C

Typical Applications

V_isol

AC sinus 50Hz, t = 1 min

• AC inverter drives

• UPS

• Electronic Welding

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Remarks

• Case temperatur limited to T_C=125°C

max.

I_C= 150 A

V_CE(sat)

T_j= 25 °C

1.7

2.1

_GE= 15 V

• Not for new design

T_j= 125 °C

2.00

2.45

chiplevel

T_j= 25 °C

T_j= 125 °C

T_j= 25 °C

T_j= 125 °C

V_CE0

r_CE

1.2

1.1

6.0

9.0

6.5

0.3

0.9

4.7

7.3

5.8

0.1

mΩ

V_GE= 15 V

V_GE(th)

I_CES

V_GE=V_CE, I_C= 6 mA

V_GE= 0 V

T_j= 25 °C

T_j= 125 °C

f = 1 MHz

Ω

_CE= 1200 V

C_ies

C_oes

C_res

Q_G

10.7

0.56

0.48

1200

5.00

300

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

t_d(on)

t_r

V_CC= 600 V

I_C= 150 A

T_j= 125 °C

E_on

_{G on}= 3 Ω

_{G off}= 3 Ω

t_d(off)

t_f

570

110

E_off

K/W

R_th(j-c)

R_th(j-s)

per IGBT

0.15

Rev. 19 – 02.12.2008

12 3 4 5

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