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SDTC114YET1G PDF预览

SDTC114YET1G

更新时间: 2024-11-26 12:22:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
12页 150K
描述
Digital Transistors (BRT) R1 = 10 k, R2 = 47 k

SDTC114YET1G 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:4 weeks风险等级:0.73
Is Samacsys:N其他特性:BUILT IN BIAS RESISTANCE RATIO IS 4.7
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W参考标准:AEC-Q101
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SDTC114YET1G 数据手册

 浏览型号SDTC114YET1G的Datasheet PDF文件第2页浏览型号SDTC114YET1G的Datasheet PDF文件第3页浏览型号SDTC114YET1G的Datasheet PDF文件第4页浏览型号SDTC114YET1G的Datasheet PDF文件第5页浏览型号SDTC114YET1G的Datasheet PDF文件第6页浏览型号SDTC114YET1G的Datasheet PDF文件第7页 
MUN2214, MMUN2214L,  
MUN5214, DTC114YE,  
DTC114YM3, NSBC114YF3  
Digital Transistors (BRT)  
R1 = 10 kW, R2 = 47 kW  
http://onsemi.com  
PIN CONNECTIONS  
NPN Transistors with Monolithic Bias  
Resistor Network  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
baseemitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable  
SC59  
CASE 318D  
STYLE 1  
XX MG  
G
1
SOT23  
CASE 318  
STYLE 6  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
XXX MG  
G
1
MAXIMUM RATINGS (T = 25°C)  
A
SC70/SOT323  
CASE 419  
Rating  
CollectorBase Voltage  
CollectorEmitter Voltage  
Collector Current Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
XX MG  
G
STYLE 3  
V
CBO  
V
CEO  
1
50  
Vdc  
SC75  
CASE 463  
STYLE 1  
I
C
100  
40  
mAdc  
Vdc  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
IN(rev)  
6
Vdc  
SOT723  
CASE 631AA  
STYLE 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
SOT1123  
CASE 524AA  
STYLE 1  
X M  
1
XXX  
= Specific Device Code  
M
G
=
=
Date Code*  
PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 Rev. 0  
DTC114Y/D  

SDTC114YET1G 替代型号

型号 品牌 替代类型 描述 数据表
DTC114YET1G ONSEMI

完全替代

Bias Resistor Transistor
PDTC114YE,115 NXP

功能相似

PDTC114Y series - NPN resistor-equipped trans
DTC114YET1 ONSEMI

功能相似

NPN SILICON BIAS RESISTOR TRANSISTORS

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