SDR803
Thru
SDR817
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
100A, 60nsec, 50-1100 V
Ultra Fast Recovery Rectifier
SDR
__ __
│
│
│
│
│
└
└
Screening 2/ __ = Not Screened
TX = TX Level
│
│
│
│
│
│
│
│
└
TXV = TXV Level
S = S Level
Features:
•
•
•
•
•
•
•
•
Fast Recovery: 60nsec Maximum
Low Forward Voltage Drop
Low Reverse Leakage Current
Single Chip Construction
PIV to 1100 Volts
Hermetically Sealed
Pin Configuration __ = Normal (Cathode to Stud)
(See Table 1)
R = Reverse (Anode to Stud)
Family/Voltage
803 = 50V
804 = 100V
805 = 150V
806 = 200V
807 = 250V
808 = 300V
813 = 700V
814 = 800V
815 = 900V
816 = 1000V
817 = 1100V
809 = 350V
810 = 400V
811 = 500V
812 = 600V
For High Efficiency Applications
TX, TXV, and S-Level Screening Available 2/
Maximum Ratings 4/
Symbol
Value
Units
SDR803
SDR804
SDR805
SDR806
SDR807
SDR808
SDR809
SDR810
SDR811
SDR812
SDR813
SDR814
SDR815
SDR816
SDR817
50
100
150
200
250
300
350
400
500
600
700
800
900
1000
1100
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage and
DC Blocking Voltage @ 100µA
Volts
Average Rectified Forward Current
100
Io
Amps
Amps
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
SDR803 – 806
SDR807 – 809
SDR810 – 814
SDR815 – 817
1000
800
700
600
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
IFSM
Operating & Storage Temperature
TOP & TSTG
RθJC
-55 to +175
0.85
ºC
Thermal Resistance (Junction to Case)
ºC/W
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: IF = 500 mA, IR = 1 Amp, IRR = 250 mA.
4/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0059G
DOC