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SDR622DM PDF预览

SDR622DM

更新时间: 2024-11-13 04:32:23
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 36K
描述
40 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST COMMOM CATHODE CENTERTAP RECTIFIER

SDR622DM 技术参数

生命周期:Active零件包装代码:TO-254AA
包装说明:HERMETIC SEALED, TO-254, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
其他特性:LOW LEAKAGE CURRENT应用:HYPER FAST RECOVERY
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JEDEC-95代码:TO-254AAJESD-30 代码:S-XSFM-P3
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最高工作温度:200 °C最大输出电流:40 A
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE

SDR622DM 数据手册

 浏览型号SDR622DM的Datasheet PDF文件第2页 
SDR620CTM & Z  
thru  
SDR622CTM & Z  
SOLID STATE DEVICES, INC.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
40 AMPS  
100 - 200 VOLTS  
35 nsec  
Designer's Data Sheet  
HYPER FAST  
COMMOM CATHODE  
CENTERTAP RECTIFIER  
FEATURES:  
• Replaces 1N6657, 1N6658, 1N6659 Devices  
• Hyper Fast Recovery: 35 nsec Maximum  
• High Surge Rating  
• Low Reverse Leakage Current  
• Low Junction Capacitance  
TO-254Z (Z)  
TO-254 (M)  
• Hermetically Sealed Package  
• Gold Eutectic Die Attach available  
• Ultrasonic Aluminum Wire Bonds  
• TX, TXV and Space Level Screening Available  
Available in Following Configurations: 3/  
SDR620CTM, SDR620CTZ, SDR620CAM, SDR620CAZ, SDR620DM, SDR620DZ  
SDR621CTM, SDR621CTZ, SDR621CAM, SDR621CAZ, SDR621DM, SDR621DZ  
SDR622CTM, SDR622CTZ, SDR622CAM, SDR622CAZ, SDR622DM, SDR622DZ  
SYMBOL  
VALUE  
UNITS  
Maximum Ratings  
100  
150  
200  
Peak Repetitive Reverse and  
DC Blocking Voltage 2/  
SDR620CTM & Z  
SDR621CTM & Z  
SDR622CTM & Z  
V
RRM  
V
RWM  
Volts  
Amps  
Amps  
oC  
V
R
Average Rectified Forward Current  
(Resistive load, 60Hz, Sine Wave, T = 25oC) 1/  
Io  
40  
300  
A
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave, T = 25oC, per leg) 1/  
I
FSM  
A
Operating and Storage Temperature  
TOP & Tstg  
-65 TO +200  
Maximum Thermal Resistance  
Junction to Case,each individual diode  
Junction to Case, 1/  
1.2  
0.8  
R
oC/W  
qJC  
NOTES:  
1/  
2/  
3/  
Both Legs Tied Together  
Higher Voltages Available  
Consult Factory for Doubler Specifications  
NOTE: All specifications are subject to change without notification.  
DATA SHEET #: RC0027E  
PM  
SCD's for these devices should be reviewed by SSDI prior to release.  

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