Datasheet > SDI200N12

SDI200N12

更新时间： 2024-10-01 00:02:03

品牌	Logo	应用领域
SIRECTIFIER		晶体双极型晶体管双极性晶体管栅
页数	文件大小	规格书
2页	457K
描述
绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),NPT技术的IGBT模块NPT IGBT Modules (None Punch Through Technology).

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中文翻译

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数据手册

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SDI200N12 数据手册

SDI200N12

NPT IGBT Modules

Dimensions in mm (1mm = 0.0394")

T C, unless otherwise specified

= 25^o

Absolute Maximum Ratings

Symbol

IGBT

Conditions

Units

Values

1200

CES

= 25(80)^o

200(180)

400(360)

= 25(80)^oC, tP =1ms

CRM

GES

Vj,(Tstg

isol

+20

^oC

)

TOPERATION < Tstg

40...+150(125)

2500

AC, 1min

Inverse Diode

= 25(80)^o

= 25(80)^oC, tP =1ms

200(130)

400(360)

1450

IF = -IC

IFRM

tP =10ms; sin.;Tj=150^oC

IFSM

Freewheeling diode

= 25(80)^o

= 25(80)^oC, tP =1ms

260(180)

400(360)

IF = -IC

IFRM

tP =10ms; sin.;Tj=150^oC

IFSM

1800

中文翻译

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