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SDI200S12 PDF预览

SDI200S12

更新时间: 2024-11-18 00:02:03
品牌 Logo 应用领域
SIRECTIFIER 晶体双极型晶体管双极性晶体管
页数 文件大小 规格书
2页 455K
描述
绝缘栅双极型晶体管(IGBT)Isolated Gate Bipolar Transistor (IGBTs),SPT技术的IGBT模块SPT IGBT Modules (Soft Punch Through Technology)。

SDI200S12 数据手册

 浏览型号SDI200S12的Datasheet PDF文件第2页 
SDI200S12  
SPT IGBT Modules  
Dimensions in mm (1mm = 0.0394")  
T C, unless otherwise specified  
= 25o  
C
Absolute Maximum Ratings  
Symbol  
Conditions  
Values  
Units  
IGBT  
1200  
V
CES  
V
A
T
T
C
C
= 25(80)o  
C
I
C
310(220)  
620(440)  
= 25(80)oC, tP =1ms  
A
I
CRM  
GES  
Vj,(Tstg  
isol  
_
+20  
V
V
oC  
_
_
T
)
TOPERATION < Tstg  
40...+150(125)  
4000  
AC, 1min  
V
V
Inverse Diode  
IF=-IC  
= 25(80)o  
= 25(80)oC, tP =1ms  
C
190(130)  
620(440)  
1450  
T
T
C
C
A
A
IFRM  
tP =10ms; sin.;Tj=150oC  
IFSM  
A

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