Datasheet > SDI200S12

SDI200S12

更新时间： 2024-10-01 00:02:03

品牌	Logo	应用领域
SIRECTIFIER		晶体双极型晶体管双极性晶体管栅
页数	文件大小	规格书
2页	455K
描述
绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs)，SPT技术的IGBT模块SPT IGBT Modules (Soft Punch Through Technology)。

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SDI200S12 数据手册

SDI200S12

SPT IGBT Modules

Dimensions in mm (1mm = 0.0394")

T C, unless otherwise specified

= 25^o

Absolute Maximum Ratings

Symbol

Conditions

Values

Units

IGBT

1200

CES

= 25(80)^o

310(220)

620(440)

= 25(80)^oC, tP =1ms

CRM

GES

Vj,(Tstg

isol

+20

^oC

)

TOPERATION < Tstg

40...+150(125)

4000

AC, 1min

Inverse Diode

IF=-IC

= 25(80)^o

= 25(80)^oC, tP =1ms

190(130)

620(440)

1450

IFRM

tP =10ms; sin.;Tj=150^oC

IFSM

中文翻译

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