Datasheet > SDB2005BP

SDB2005BP

更新时间： 2024-09-17 14:54:19

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	149K
描述
肖特基二极管

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中文翻译

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数据手册

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SDB2005BP 数据手册

SDB2005BP

Surface Mount Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

Anode

• Ultra small power mold type

• Low forward voltage

• High reliability

Transparent top view

Simplified outline DFN1006-2B and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Reverse Voltage

V_R

Average Rectified Forward Current

Peak Forward Surge Current (tp = 8.3 ms)

Power Dissipation

I_F(AV)

500

100

I_FSM

P_tot

T_J

℃

125

Operating Junction Temperature

Storage Temperature Range

- 55 to + 150

T_stg

℃

Thermal Characteristics

Symbol

R_θJA

Value

1000

Unit

Parameter

Typical Thermal Resistance from Junction to Ambient ¹⁾

℃/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Electrical Characteristics (T_a= 25℃)

Min.

Parameter

Symbol

V_(BR)R

Max.

Unit

Reverse Breakdown Voltage

at I_R= 500 µA

Forward Voltage

at I_F= 0.1 mA

at I_F= 1 mA

at I_F= 10 mA

at I_F= 100 mA

at I_F= 500 mA

Reverse Current

at V_R= 10 V

180

240

290

380

500

V_F

I_R

µA

Total Capacitance

at V^R= 1 V, f = 1 MHz

C_T

100

1 / 3

Dated: 30/03/2023 Rev: 03

12 3

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