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SDB2010DP PDF预览

SDB2010DP

更新时间: 2024-11-03 14:49:39
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
3页 222K
描述
肖特基整流管

SDB2010DP 数据手册

 浏览型号SDB2010DP的Datasheet PDF文件第2页浏览型号SDB2010DP的Datasheet PDF文件第3页 
SDB2010DP  
Silicon Epitaxial Planar Schottky Barrier Rectifier  
PINNING  
PIN  
1
DESCRIPTION  
Cathode  
Features  
Anode  
2
• Utra low forward voltage  
• Ultra small SMD package  
2
1
Top view  
Simplified outline DFN1608-2H and symbol  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
Value  
Unit  
Reverse Voltage  
VR  
IF  
20  
V
A
Continuous Forward Current  
1
Repetitive Peak Forward Current (tp 1 ms)  
Non-Repetitive Peak Forward Surge Current (t = 8 ms)  
Junction Temperature  
IFRM  
IFSM  
Tj  
3.5  
A
6
A
150  
Storage Temperature Range  
Tstg  
- 65 to + 150  
Characteristics at Ta = 25℃  
Parameter  
Symbol  
VF  
Max.  
Unit  
mV  
Forward Voltage  
at IF = 0.1 mA  
at IF = 1 mA  
at IF = 10 mA  
at IF = 100 mA  
at IF = 1000 mA  
90  
150  
220  
290  
620  
Reverse Current  
at VR = 10 V  
at VR = 20 V  
IR  
0.6  
1.5  
mA  
1 / 3  
®
Dated: 11/02/2022 Rev: 01  

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