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SD620CT_04 PDF预览

SD620CT_04

更新时间: 2024-11-21 03:33:03
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
2页 42K
描述
SCHOTTKY BARRIER RECTIFIERS

SD620CT_04 数据手册

 浏览型号SD620CT_04的Datasheet PDF文件第2页 
DATA SHEET  
SD620CT~SD6100CT  
SCHOTTKY BARRIER RECTIFIERS  
Unit : inch (mm)  
TO-251AB  
6.0 Amperes  
20 to 100 Volts  
CURRENT  
VOLTAGE  
FEATURES  
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O  
• For surface mounted applications  
• Low profile package  
.264(6.7)  
.248(6.3)  
.098(2.5)  
.082(2.1)  
.024(0.6)  
.016(0.4)  
• Built-in strain relief  
.216(5.5)  
.200(5.1)  
• Low power loss, High efficiency  
• High surge capacity  
• For use in low voltage high frequency inverters, free wheeling, and  
polarity protection applications  
• High temperature soldering guaranteed:260OC/10 seconds at terminals  
• Pb free product are available : 99% Sn above can meet Rohs environment substance  
directive request  
.071(1.8)  
.051(1.3)  
.032(0.8)  
.012(0.3)  
.02(0.5)  
.09 .09  
MECHANICALDATA  
(2.3) (2.3)  
Case: D PAK/TO-251AB molded plastic  
Terminals: Solder plated, solderable per MIL-STD-202G,Method 208  
Polarity: As marking  
Weight: 0.015 ounces, 0.4grams.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
PA R A M E TE R  
S YM B O L S D 620C T S D 630C T S D 640C T S D 650C T S D 660C T S D 680C T S D 6100C T U N ITS  
M axim um R ecurrent P eak R everse Voltage  
V
V
R R M  
20  
14  
20  
30  
21  
30  
40  
28  
40  
50  
35  
50  
6.0  
75  
60  
42  
60  
80  
56  
80  
100  
70  
V
V
V
A
A
V
M axim um R M S Voltage  
R M S  
M axim um D C B locking Voltage  
V
D C  
100  
M axim um A verage Forw ard C urrent .375"(9.5m m )  
I
AV  
lead length at Tc =75O  
C
P eak Forw ard S urge C urrent :8.3m s single half sine-w ave  
superim posed on rated load(JE D E C m ethod)  
IFS M  
M axim um Forw ard Voltage at 3.0A per leg  
V
F
0.55  
0.70  
0.85  
M axim um D C R everse C urrent TJ=25O  
C
0.2  
20  
IR  
m A  
at R ated D C B locking Voltage TJ=100O  
C
TypicalTherm alR esistance  
R θJC  
5
O C / W  
O perating Junction Tem perature R ang  
S torage Tem perature R ang  
T
J
-50 to +125  
-50 to +150  
O C  
T
J
,TS TG  
O C  
Note: Both Bonding and Chip structure are available.  
PAGE . 1  
STAD-DEC.16.2004  

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