Datasheet > SD620CT_09

SD620CT_09

更新时间： 2024-11-21 11:57:07

品牌	Logo	应用领域
强茂 - PANJIT		肖特基二极管
页数	文件大小	规格书
2页	47K
描述
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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中文翻译

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数据手册

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SD620CT_09 数据手册

SD620CT~SD660CT

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Unit : inch (mm)

TO-251AB

6.0 Amperes

20 to 60 Volts

CURRENT

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory Flammability Classification

94V-O

.264(6.7)

.248(6.3)

.098(2.5)

.082(2.1)

• For surface mounted applications

• Low profile package

.024(0.6)

.016(0.4)

.216(5.5)

.200(5.1)

• Built-in strain relief

• Low power loss, High efficiency

• High surge capacity

• For use in low voltage high frequency inverters, free wheeling, and

polarity protection applications

• High temperature soldering guaranteed:260^OC/10 seconds at terminals

.071(1.8)

.051(1.3)

• In compliance with EU RoHS 2002/95/EC directives

.032(0.8)

.012(0.3)

.02(0.5)

.09 .09

MECHANICALDATA

(2.3) (2.3)

• Case: TO-251AB molded plastic

• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026

• Polarity: As marking

• Standard packaging: 16mm tape (EIA-481)

• Weight: 0.0104 ounces, 0.297 grams.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

SD620CT SD630CT SD640CT SD650CT SD660CT

PARAMETER

SYMBOL

V_{R R M}

UNITS

Maximum Recurrent Peak Reverse Voltage

6.0

Maximum RMS Voltage

V_{R S M}

V_{D C}

I_{F ( A V )}

I_{F S M}

V_F

Maximum DC Blocking Voltage

Maximum Average Forward Current at Tc =75^O

Peak Forward Surge Current :8.3ms single half sine-wave

superimposed on rated load(JEDEC method)

Maximum Forward Voltage at 3.0A per leg

0.55

0.7

Maximum DC Reverse Current T_J=25^O

0.2

0.1

I_R

at Rated DC Blocking Voltage T_J=100^O

Typical Thermal Resistance

R_{θ J C}

^OC / W

^OC

Operating Junction Temperature Range

Storage Temperature Range

-55 to +125

-55 to +150

STG

-55 to +150

^OC

Note: Both Bonding and Chip structure are available.

PAGE . 1

STAD-APR.27.2009

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