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SD445-14-21-305

更新时间： 2024-09-17 04:05:15
品牌 Logo 应用领域
ADVANCEDPHOTONIX 光电二极管光电二极管
页数 文件大小 规格书
1页 94K
描述
Red Enhanced High Performance Silicon Photodiode

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中文翻译

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SD445-14-21-305 数据手册

  
Red Enhanced High Performance Silicon Photodiode  
SD 445-14-21-305  
PACKAGE DIMENSIONS INCH [mm]  
.084 [2.13]  
.076 [1.93]  
±.005 [0.13]  
.053 [1.35]  
ANODE INDEX  
2X Ø.018 [0.46]  
ANODE  
.657 [16.69]  
.643 [16.33]  
±.010 [0.25]  
.492 [12.50]  
120°  
VIEWING  
ANGLE  
CATHODE  
.005 [0.13] MAX  
EPOXY ABOVE PACKAGE  
.59  
6
4]
[1  
5.1  
2X .30 [7.6] MIN  
.584 [14.83]  
CHIP DIMENSIONS INCH [mm]  
.422 [10.72] SQUARE  
CERAMIC PACKAGE  
.3937 [1.00] SQUARE  
ACTIVE AREA  
FEATURES  
DESCRIPTION  
APPLICATIONS  
• Low noise  
The SD 445-14-21-305 is a high performance silicon  
PIN photodiode, red enhanced, packaged in a leaded  
hermetic ceramic package.  
• Instrumentation  
• Industrial  
• Medical  
• Red enhanced  
• High shunt resistance  
• High response  
SPECTRAL RESPONSE  
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
SYMBOL  
VBR  
PARAMETER  
MIN  
MAX  
75  
UNITS  
Reverse Voltage  
V
TSTG  
TO  
Storage Temperature  
Operating Temperature  
Soldering Temperature*  
-55  
-20  
+150  
+75  
°C  
°C  
°C  
TS  
+240  
* 1/16 inch from case for 3 seconds max.  
Wavelength (nm)  
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
SYMBOL  
CHARACTERISTIC  
Dark Current  
TEST CONDITIONS  
MIN  
TYP  
MAX UNITS  
ID  
VR = 5V  
6.0  
30  
nA  
MW  
RSH  
Shunt Resistance  
VR = 10 mV  
30  
VR = 0V, f = 1 MHz  
VR = 5V, f = 1 MHz  
Spot Scan  
1700  
500  
CJ  
Junction Capacitance  
pF  
lrange  
Spectral Application Range  
350  
1100  
nm  
l= 633nm, VR = 0 V  
l= 900nm, VR = 0 V  
I = 10 μA  
VR = 5V @ l=950nm  
RL = 50 Ω,VR = 0 V  
RL = 50 Ω,VR = 10 V  
0.32  
0.50  
0.36  
0.55  
R
Responsivity  
A/W  
VBR  
Breakdown Voltage  
50  
V
NEP  
Noise Equivalent Power  
8.6X10-14  
190  
W/ √ Hz  
tr  
Response Time**  
nS  
13  
**Response time of 10% to 90% is specified at 660nm wavelength light.  
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are  
subject to change without notice.  
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com  
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