是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XDFM-F6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.64 |
最大集电极电流 (IC): | 9 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-XDFM-F6 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 6 | 最高工作温度: | 200 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 100 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SD1495E3 | MICROSEMI |
获取价格 |
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, | |
SD1496 | MICROSEMI |
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RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS | |
SD1496-03 | MICROSEMI |
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RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN | |
SD1496-3 | MICROSEMI |
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RF & MICROWAVE TRANSISTORS 900-960 MHz CLASS C BASE STATIONS | |
SD14-R58 | COOPER |
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General Purpose Inductor, 0.58uH, 20%, 1 Element, Ferrite-Core, SMD, 2020 | |
SD14-R58-R | COOPER |
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General Purpose Inductor, 0.58uH, 20%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT | |
SD14-R87-R | COOPER |
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General Purpose Inductor, 0.87uH, 20%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT | |
SD15 | DIODES |
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320W Unidirectional TVS Diode | |
SD15 | BL Galaxy Electrical |
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15V,350W,Surface Mount TVS | |
SD15 | UMW |
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反向截止电压(Vrwm):15V;极性/通道数(Channel):1-Line,Unidi |