生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PDFM-F3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.09 | Is Samacsys: | N |
最大集电极电流 (IC): | 9 A | 集电极-发射极最大电压: | 26 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDFM-F3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 200 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 190 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 860 MHz |
Base Number Matches: | 1 |
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