Datasheet > SCS320AH

SCS320AH

更新时间： 2024-11-05 11:08:15

品牌	Logo	应用领域
罗姆 - ROHM		电子开关
页数	文件大小	规格书
7页	876K
描述
可降低开关损耗，可高速开关。 SiC支持页面评估板, 文件应用实例介绍罗姆制SiC元器件何谓SiC功率元器件？电子小知识#banner-area a:link {text-decoration

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SCS320AH 数据手册

SCS320AH

SiC Schottky Barrier Diode

Datasheet

lOutline

TO-220ACP

(1)

V_R

I_F

650V

20A

Q_C

47nC

(3)

(2)

lFeatures

1) Shorter recovery time

lInner circuit

(1)

2) Reduced temperature dependence

3) High-speed switching possible

4) High surge current capability

(1) Cathode

(2) Cathode

(3) Anode

(2)

(3)

lPackaging specifications

Packaging

Tube

Reel size (mm)

lConstruction

Tape width (mm)

Type

Silicon carbide epitaxial planar type

Basic ordering unit (pcs)

Packing code

Marking

SCS320AH

lAbsolute maximum ratings (T_vj=25°C unless otherwise specified)

Parameter

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Symbol

V_RM

V_R

Value

650

Unit

(T =

I_F

Continuous forward current

125°C)

PW=10ms sinusoidal, T_vj=25°C

123

104

450

Surge non-

repetitive

forward current

PW=10ms sinusoidal, T_vj=150°C

I_FSM

PW=10ms square, T_vj=25°C

I_FRM

Repetitive peak forward current

1<PW<10ms, T_vj=25°C

1<PW<10ms, T_vj=150°C

A²s

i²t value

∫i²dt

P_D

T_vj

Total power disspation

115

175

Virtual junction temperature

Range of storage temperature

°C

T_stg

°C

-55 to +175

*1 Limited by maximum T_vjand for Max. R_thJC. *2 T_c=100°C, T_vj=150°C, Duty cycle=10% *3 T_c=25°C

www.rohm.com

TSZ22111・14・001

TSQ50221-SCS320AH

9.Nov.2022 - Rev.003

1/5

12 3 4 5 6 7

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