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SCS40STN PDF预览

SCS40STN

更新时间: 2024-11-05 01:18:59
品牌 Logo 应用领域
SECOS 二极管
页数 文件大小 规格书
2页 325K
描述
Silicon Epitaxial Planar Schottky Barrier Rectifiers

SCS40STN 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PBCC-N2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.74
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PBCC-N2
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:0.12 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:NO LEAD端子位置:BOTTOM
Base Number Matches:1

SCS40STN 数据手册

 浏览型号SCS40STN的Datasheet PDF文件第2页 
SCS40STN  
0.12 A, 40 V  
Silicon Epitaxial Planar Schottky Barrier Rectifiers  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
DESCRIPTION  
WBFBP-02C  
Planar Schottky barrier diode with an integrated guard ring  
for stress protection  
L C  
FEATURES  
D
J
Low diode capacitance  
H
M
M
G
Low forward voltage  
Guard ring protected  
High breakdown voltage  
B
E F  
K
A
  
  
APPLICATION  
Ultra high-speed switching  
Voltage clamping  
Mobile communication ,digital (still) cameras ,  
PDAs and PCMCIA cards  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
0.950  
0.550  
0.450  
Max.  
Min.  
Max.  
0.325  
0.325  
0.325  
0.725  
A
B
C
D
1.050  
0.650  
0.550  
G
H
J
0.275  
0.275  
0.275  
0.675  
0.450 REF.  
0.400 REF.  
0.275 0.325  
K
E
F
L
0.010  
0.070  
M
0.010 REF.  
MARKING  
S6  
PACKAGE INFORMATION  
Package  
MPQ  
10K  
Leader Size  
WBFBP-02C  
7 inch  
MAXIMUM RATINGS CHARACTERISTICS(TA=25°C unless otherwise specified)  
Parameter  
Symbol  
Limits  
Unit  
DC reverse voltage  
VR  
40  
V
Forward continuous current  
IF  
120  
200  
mA  
mA  
Peak forward surge current @ Tp< 10ms  
Junction, Storage Temperature Range  
IFSM  
TJ, TSTG  
150, -55 ~ 150  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameters  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
-
-
0.38  
IF=1mA  
Forward Voltage  
VF  
V
-
-
-
-
-
-
-
-
-
-
0.5  
1
IF=10mA  
IF=40mA  
1
VR=30V  
Reverse Current1  
Diode capacitance  
IR  
μA  
10  
5
VR=40V  
Cd  
pF  
VR =0, f=1.0MHz  
Note:  
1. Pulse Test: tp=300μs; δ=0.02.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
13-Dec-2013 Rev. B  
Page 1 of 2  

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