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SCMT474K122H8N29-F PDF预览

SCMT474K122H8N29-F

更新时间: 2024-11-12 03:33:15
品牌 Logo 应用领域
CDE 双极性晶体管
页数 文件大小 规格书
3页 334K
描述
Single/Dual IGBT Snubber Capacitor Modules

SCMT474K122H8N29-F 数据手册

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SCM T型 或双个IGBT突波吸收密封盒装 容器  
Type SCMT Single/Dual IGBT Snubber Capacitor Modules  
用途  
Applications  
使用SCMT型目的就像是放电限制分离耦合,是保护双IGBT模块。  
Use style SCMT as a discharge restrictive de-coupling to protect  
dual IGBT modules from overvoltage, Figure 1. Style SCMT  
如图1,SCMT型也是有“N”型或“P”型突波吸收电容,各对一个IGBT.。  
may also be used as an “N” or “P” type snubber component for a  
clamp snubber where single IGBT modules are used, Figure 2.  
特点  
Highlights  
可直接安装在IGBT上  
一条或者两条引线可连接到电阻上  
Mount directly to the IGBT module  
低电感  
1 or 2 wire taps for connecting external resistor  
UL94VO阻燃环氧树脂封装  
Low inductance  
低损耗  
Flame resistant case and epoxy, meets UL 94VO  
各种间距的电容器可供选择  
Low Loss  
内装快恢管  
Other terminal pitches and capacitance values available.  
使用环保材料  
Hyperfast diodes integrated into  
package  
RoHS Compliant  
放电限制分离偶合  
RCD吸收回路  
Discharge Restrictive De-coupling  
在图1中的线路中操作上与放电限制分离耦合一样,  
RCD Clamp  
这种突波吸收功能就像一个夹子,如图2,在关断时,  
The circuit in Figure 1 operates on the same  
The function of this snubber is similar to a clamp,  
principles as the de-coupling capacitor, but only  
但只有在关閉转换时,  
during turn-off switching. As the IGBT turns  
Figure 2. At turn-off, the snubber diode is forward  
于是就产生了突波吸收的作用。感性线圈中产生的能量  
biased and the snubber is activated. The energy  
off, energy trapped in the loop inductance is  
当IGBT关的时候,感性线圈中的能量被转移到电容上。  
trapped in the stray inductance is absorbed by the  
被突波吸收电容吸收了. 当打開时,突波吸收电容  
snubber capacitor. During turn-on the snubber  
transferred to the capacitor. The diode blocks  
oscillations from occurring and excess charge on  
从充电到充电过于饱和,通过电容内部电阻,二极管阻止了振荡。  
the capacitor is discharged through the external  
caps that were fully charged to bus voltage have  
通过母线电压充至饱和,放电回路二极管的正向偏置,  
a discharge path through the forward biased  
resistor.  
free-wheel diode, the IGBT, and the snubber  
这样会减少反向瞬间电压.  
IGBT,突波吸收电容电阻。  
resistors. This reduces the reverse recovery voltage  
transient.  
CDE Cornell Dubilier1605 E. Rodney French BlvdNew Bedford, MA 02744Phone: (508)996-8561Fax: (508)996-3830www.cde.com  

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