生命周期: | Active | 包装说明: | H2, TO-8B |
Reach Compliance Code: | compliant | 风险等级: | 5.72 |
其他特性: | SMA-F, I/P POWER-MAX (PEAK)=27DBM | 构造: | COAXIAL |
增益: | 19 dB | 最大输入功率 (CW): | 13 dBm |
最大工作频率: | 500 MHz | 最小工作频率: | 5 MHz |
最高工作温度: | 85 °C | 最低工作温度: | -55 °C |
射频/微波设备类型: | WIDE BAND LOW POWER | 最大电压驻波比: | 2 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SBR6577 | APITECH |
获取价格 |
Wide Band Low Power Amplifier, 5MHz Min, 500MHz Max, H2, TO-8B | |
SBR6582 | APITECH |
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Wide Band Low Power Amplifier, 30MHz Min, 500MHz Max, H2, TO-8B | |
SBR6587 | APITECH |
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10 MHz - 400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, H2, TO-8B | |
SBR6588 | APITECH |
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Wide Band Low Power Amplifier, 5MHz Min, 450MHz Max, H2, TO-8B | |
SBR6605 | APITECH |
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Wide Band Low Power Amplifier, 10MHz Min, 600MHz Max, H2, TO-8B | |
SBR6609 | APITECH |
获取价格 |
Wide Band Medium Power Amplifier, 5MHz Min, 500MHz Max, H2, TO-8B | |
SBR660CTL | DIODES |
获取价格 |
Rectifier Diode, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252, GREEN, PLASTIC, DPAK | |
SBR660CTL-13 | DIODES |
获取价格 |
Rectifier Diode, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252, GREEN, PLASTIC, DPAK | |
SBR660CTLQ | DIODES |
获取价格 |
Reduced high temperature reverse leakage; Increased reliability | |
SBR660CTLQ_15 | DIODES |
获取价格 |
SUPER BARRIER RECTIFIER 6A SBR® |