生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.72 | 其他特性: | SMA-F, I/P POWER-MAX (PEAK)=27DBM |
构造: | COAXIAL | 增益: | 17.5 dB |
最大输入功率 (CW): | 18 dBm | 最大工作频率: | 450 MHz |
最小工作频率: | 5 MHz | 最高工作温度: | 85 °C |
最低工作温度: | -55 °C | 射频/微波设备类型: | WIDE BAND LOW POWER |
最大电压驻波比: | 2 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SBR6605 | APITECH |
获取价格 |
Wide Band Low Power Amplifier, 10MHz Min, 600MHz Max, H2, TO-8B | |
SBR6609 | APITECH |
获取价格 |
Wide Band Medium Power Amplifier, 5MHz Min, 500MHz Max, H2, TO-8B | |
SBR660CTL | DIODES |
获取价格 |
Rectifier Diode, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252, GREEN, PLASTIC, DPAK | |
SBR660CTL-13 | DIODES |
获取价格 |
Rectifier Diode, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252, GREEN, PLASTIC, DPAK | |
SBR660CTLQ | DIODES |
获取价格 |
Reduced high temperature reverse leakage; Increased reliability | |
SBR660CTLQ_15 | DIODES |
获取价格 |
SUPER BARRIER RECTIFIER 6A SBR® | |
SBR660CTLQ-13 | DIODES |
获取价格 |
Reduced high temperature reverse leakage; Increased reliability | |
SBR660CTT4G | ONSEMI |
获取价格 |
3A, 40V, SILICON, RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3/2 | |
SBR6654 | APITECH |
获取价格 |
Wide Band Low Power Amplifier, 5MHz Min, 500MHz Max, H2, TO-8B | |
SBR6672 | APITECH |
获取价格 |
Wide Band Low Power Amplifier, 5MHz Min, 500MHz Max, H2, TO-8B |