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SBLF2030CTHE3 PDF预览

SBLF2030CTHE3

更新时间: 2024-10-28 01:16:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 144K
描述
Dual Common Cathode Schottky Rectifier

SBLF2030CTHE3 数据手册

 浏览型号SBLF2030CTHE3的Datasheet PDF文件第2页浏览型号SBLF2030CTHE3的Datasheet PDF文件第3页浏览型号SBLF2030CTHE3的Datasheet PDF文件第4页浏览型号SBLF2030CTHE3的Datasheet PDF文件第5页浏览型号SBLF2030CTHE3的Datasheet PDF文件第6页 
SBL20x0CT, SBLF20x0CT, SBLB20x0CT,  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Schottky Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Power pack  
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
1
SBL20x0CT  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
SBLF20x0CT  
PIN 1  
PIN 2  
CASE  
PIN 1  
PIN 2  
PIN 3  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AB and ITO-220AB package)  
PIN 3  
TO-263AB  
K
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
2
1
TYPICAL APPLICATIONS  
SBLB20x0CT  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, and polarity protection application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
PRIMARY CHARACTERISTICS  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
IF(AV)  
2 x 10 A  
VRRM  
30 V to 40 V  
250 A  
IFSM  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
VF  
0.60 V  
TJ max.  
Package  
Diode variations  
150 °C  
TO-220AB, ITO-220AB, TO-263AB  
Common cathode  
meets JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SBL2030CT  
SBL2040CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
30  
21  
30  
40  
28  
40  
V
total device  
per diode  
20  
10  
Maximum average forward rectified current  
IF(AV)  
IFSM  
at TC = 105 °C  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
250  
1.0  
Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz  
Operating junction and storage temperature range  
IRRM  
TJ, TSTG  
VAC  
- 55 to + 150  
1500  
°C  
V
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
Revision: 12-Jun-13  
Document Number: 88730  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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