SBL(F,B)25L20CT thru SBL(F,B)25L30CT
Vishay General Semiconductor
Dual Low V Common Cathode Schottky Rectifier
F
FEATURES
ITO-220AB
TO-220AB
• Low power loss, high efficiency
• Very low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF
3
3
2
2
1
maximum peak of 245 °C (for TO-263AB package)
1
SBL25LxxCT
SBLF25LxxCT
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
PIN 1
PIN 2
CASE
PIN 1
PIN 2
PIN 3
PIN 3
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TO-263AB
K
TYPICAL APPLICATIONS
2
For use in low voltage, high frequency inverters,
switching mode power supplies, freewheeling diodes,
OR-ing diodes, dc-to-dc converters and polarity
protection application.
1
SBLB25LxxCT
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
12.5 A x 2
20 V to 30 V
180 A
VF
0.39 V
TJ max.
150 °C
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
SBL25L20CT
SBL25L25CT
SBL25L30CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
25
30
V
Maximum average forward rectified
current at TC = 95 °C
total device
per diode
25
12.5
IF(AV)
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
TJ, TSTG
VAC
180
- 55 to + 150
1500
A
°C
V
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Document Number: 88731
Revision: 08-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1