Datasheet > SBL10L25-HE3/45

SBL10L25-HE3/45

更新时间： 2024-02-23 05:32:17

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	128K
描述
DIODE 10 A, 25 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

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SBL10L25-HE3/45 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TO-220AC
包装说明：	ROHS COMPLIANT, PLASTIC PACKAGE-2	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.71
Is Samacsys：	N	Base Number Matches：	1

SBL10L25-HE3/45 数据手册

SBL10L25, SBLF10L25, SBLB10L25

Vishay General Semiconductor

Low V Schottky Barrier Rectifier

FEATURES

TO-220AC

ITO-220AC

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Very low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

SBL10L25

PIN 1

SBLF10L25

PIN 1

CASE

PIN 2

• Solder dip 260 °C, 40 s (for TO-220AC and

ITO-220AC package)

PIN 2

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

SBLB10L25

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters and polarity protection application.

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, TO-263AB

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

10 A

25 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

240 A

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

V_F

0.35 V

150 °C

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SBL10L25

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

V_DC

Maximum DC blocking voltage

Maximum average forward rectified current at T_C= 135 °C

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

240

Peak repetitive reverse current at t_p= 2 µs, 1 kHz

Voltage rate of change (rated V_R)

I_RRM

dV/dt

1.0

10 000

V/µs

°C

Operating junction and storage temperature range

Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min

T_J, T_STG

V_AC

- 65 to + 150

1500

Document Number: 88723

Revision: 25-Apr-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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