Datasheet > SBL1060CT

SBL1060CT

更新时间： 2024-11-12 00:02:03

品牌	Logo	应用领域
SIRECTIFIER		二极管瞄准线功效局域网
页数	文件大小	规格书
2页	102K
描述
肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。

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SBL1060CT 数据手册

SBL1050CT thru SBL1060CT

Low VF Schottky Barrier Rectifiers

Dimensions TO-220AB

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

0.500 0.550

0.580 0.630

0.390 0.420

0.139 0.161

0.230 0.270

0.100 0.125

0.045 0.065

0.110 0.230

0.025 0.040

12.70 13.97

14.73 16.00

9.91 10.66

C(TAB)

3.54

5.85

2.54

1.15

2.79

0.64

2.54

4.32

1.14

0.35

2.29

4.08

6.85

3.18

1.65

5.84

1.01

BSC

4.82

1.39

0.56

2.79

A=Anode, C=Cathode, TAB=Cathode

VRRM

VRMS

VDC

0.100

BSC

0.170 0.190

0.045 0.055

0.014 0.022

0.090 0.110

SBL1050CT

SBL1060CT

Symbol

Characteristics

Maximum Ratings

Unit

I(AV)

IFSM

Maximum Average Forward Rectified Current @TC=95^oC

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

125

0.7

Maximum Forward Voltage At 5.0A DC (Note 1)

Maximum DC Reverse Current

At Rated DC Blocking Voltage

@TJ=25^oC

0.5

@TJ=100^oC

ROJC

Typical Junction Capacitance Per Element (Note 2)

Typical Thermal Resistance (Note 3)

Operating Temperature Range

250

^oC/W

^oC

3.0

-55 to +125

-55 to +150

TSTG

Storage Temperature Range

^oC

NOTES: 1. 300us Pulse Width, 2% Duty Cycle.

2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

3. Thermal Resistance Junction To Case.

FEATURES

MECHANICAL DATA

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High current capability, low VF

* Case: TO-220AB molded plastic

* Polarity: As marked on the body

* Weight: 0.08 ounces, 2.24 grams

* Mounting position: Any

* High surge capacity

* For use in low voltage, high frequency inverters, free

whelling, and polarity protection applications

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