Datasheet > SBL1060CT-B

SBL1060CT-B

更新时间： 2024-11-13 07:40:15

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	740K
描述
Rectifier Diode,

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中文翻译

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数据手册

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SBL1060CT-B 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

SBL1020CT

THRU

Micro Commercial Components

SBL10100CT

Features

Metal of siliconrectifier, majonty carrier conducton

Guard ring for transient protection

Low power loss high efficiency

High surge capacity, High current capability

10 Amp

Schottky Barrier

Rectifier

20 to 100 Volts

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

TO-220AB

Microsemi

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Maximum Maximum

RMS

Voltage

Blocking

Voltage

Reverse

Voltage

20V

SBL1020CT SBL1020CT

SBL1030CT SBL1030CT

SBL1040CT SBL1040CT

SBL1050CT SBL1050CT

SBL1060CT SBL1060CT

20V

30V

40V

50V

60V

30V

40V

50V

60V

SBL1080CTSBL1080CT

SBL10100CTSBL10100CT

80V

100V

80V

100V

PIN 1

PIN 3

PIN 2

CASE

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

10A

T_C= 100°C

ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ

ꢀ ꢀ ꢀ ꢀ

INCHES

Peak Forward Surge

Current

I_FSM

150A

8.3ms, half sine

ꢁꢂꢃ

ꢃꢂꢄ

.560

.380

.100

ꢃꢅꢆ

ꢃꢂꢄ

14.22

9.65

ꢃꢅꢆ

15.88

10.67

3.43

ꢄꢇꢈꢉ

.625

.420

.135

2.54

.230

.380

------

.500

.090

.020

.012

.139

.140

.045

.270

.420

.250

.580

.110

.045

.025

.161

.190

.055

5.84

9.65

------

12.70

2.29

0.51

0.30

3.53

3.56

1.14

2.03

6.86

10.67

6.35

14.73

2.79

1.14

0.64

4.09

4.83

1.40

Maximum Forward

Voltage Drop Per

V_F

.55V

I_FM= 10 A mper

1020CT-1040CT

1050CT-1060CT

1080CT-10100CT

Element

TA =

25°C

.75V

.85V

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

.080

.115

2.92

0.5mA T_J= 25°C

50mA TJ = 125C

*Pulse test: Pulse width 300 msec, Duty cycle 1%

www.mccsemi.com

Revision: 4

2004/10/07

中文翻译

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