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SB860F PDF预览

SB860F

更新时间: 2024-10-28 22:27:15
品牌 Logo 应用领域
WTE 二极管瞄准线分离技术隔离技术功效局域网可编程只读存储器
页数 文件大小 规格书
3页 41K
描述
8.0A ISOLATION SCHOTTKY BARRIER RECTIFIER

SB860F 数据手册

 浏览型号SB860F的Datasheet PDF文件第2页浏览型号SB860F的Datasheet PDF文件第3页 
WTE  
POWER SEMICONDUCTORS  
SB820F – SB8100F  
8.0A ISOLATION SCHOTTKY BARRIER RECTIFIER  
Features  
!
Schottky Barrier Chip  
B
!
!
!
!
!
Guard Ring for Transient Protection  
High Current Capability, Low Forward  
Low Reverse Leakage Current  
High Surge Current Capability  
Plastic Material has UL Flammability  
Classification 94V-O  
ITO-220A  
C
Dim  
A
B
C
D
E
Min  
14.9  
Max  
15.1  
10.5  
2.87  
4.06  
14.22  
0.94  
3.91 Ø  
6.86  
4.70  
2.79  
0.64  
1.40  
5.20  
G
F
A
2.62  
3.56  
13.46  
0.68  
3.74 Ø  
5.84  
4.44  
2.54  
0.35  
1.14  
4.95  
PIN1  
2
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D  
F
G
H
I
Mechanical Data  
!
!
E
Case: ITO-220A Full Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 2.24 grams (approx.)  
Mounting Position: Any  
P
J
K
L
!
!
!
!
I
L
J
P
H
All Dimensions in mm  
Marking: Type Number  
PIN 1 +  
PIN 2 -  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SB  
820F  
SB  
830F  
SB  
840F  
SB  
850F  
SB  
860F  
SB  
SB  
Characteristic  
Symbol  
Unit  
880F 8100F  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
50  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
V
A
Average Rectified Output Current  
@TC = 95°C  
8.0  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
I
FSM  
150  
A
Forward Voltage  
@IF = 8.0A  
VFM  
IRM  
0.55  
0.75  
0.85  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.5  
50  
mA  
Typical Junction Capacitance (Note 1)  
Cj  
700  
6.9  
pF  
K/W  
°C  
Typical Thermal Resistance Junction to Case (Note 2)  
Operating and Storage Temperature Range  
RJC  
Tj, TSTG  
-65 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal resistance junction to case mounted on heatsink.  
SB820F – SB8100F  
1 of 3  
© 2002 Won-Top Electronics  

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