5秒后页面跳转
SB860FCT-LF PDF预览

SB860FCT-LF

更新时间: 2024-10-29 19:48:35
品牌 Logo 应用领域
WTE 局域网二极管
页数 文件大小 规格书
4页 45K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 60V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220, 3 PIN

SB860FCT-LF 数据手册

 浏览型号SB860FCT-LF的Datasheet PDF文件第2页浏览型号SB860FCT-LF的Datasheet PDF文件第3页浏览型号SB860FCT-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
SB820FCT – SB8100FCT  
8.0A DUAL SCHOTTKY BARRIER RECTIFIER  
Features  
Schottky Barrier Chip  
B
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
High Surge Current Capability  
Plastic Material has UL Flammability  
Classification 94V-O  
ITO-220  
C
Dim  
A
B
C
D
E
Min  
14.60  
9.70  
2.55  
2.70  
13.00  
0.50  
3.00 Ø  
6.30  
4.20  
2.50  
0.50  
2.70  
2.29  
Max  
15.40  
10.30  
2.85  
G
A
E
PIN1  
2
3
3.30  
D
13.80  
0.75  
F
G
H
I
3.50 Ø  
6.90  
Mechanical Data  
F
Case: ITO-220, Full Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 2.24 grams (approx.)  
4.80  
P
J
2.90  
K
L
0.75  
I
3.15  
P
2.79  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1 -  
PIN 3 -  
+
PIN 2  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Characteristic  
Symbol  
Unit  
820FCT 830FCT 840FCT 845FCT 850FCT 860FCT 880FCT 8100FCT  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
45  
32  
50  
35  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current @TC = 95°C  
8.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed  
on rated load (JEDEC Method)  
IFSM  
150  
A
Forward Voltage  
@IF = 4.0A  
VFM  
IRM  
0.55  
0.75  
0.85  
V
Peak Reverse Current  
At Rated DC Blocking Voltage @TA = 100°C  
@TA = 25°C  
0.5  
50  
mA  
Typical Junction Capacitance (Note 1)  
Cj  
700  
pF  
°C  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
SB820FCT – SB8100FCT  
1 of 4  
© 2006 Won-Top Electronics  

与SB860FCT-LF相关器件

型号 品牌 获取价格 描述 数据表
SB860F-LF WTE

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 60V V(RRM), Silicon, TO-220, ROHS COMPL
SB860H ZOWIE

获取价格

SCHOTTKY BARRIER RECTIFIER
SB870 SUNMATE

获取价格

Rectifier device Schottky Diode
SB87C196KC INTEL

获取价格

COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
SB87C196KC20 INTEL

获取价格

COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
SB87C196KC-20 ETC

获取价格

16-Bit Microcontroller
SB87C196KD INTEL

获取价格

Microcontroller, 16-Bit, OTPROM, 8096 CPU, 16MHz, CMOS, PQFP80, SQFP-80
SB87C196KD/ROM INTEL

获取价格

IC,MICROCONTROLLER,16-BIT,8096 CPU,CMOS,QFP,80PIN,PLASTIC
SB87C196KD20 INTEL

获取价格

Microcontroller, 16-Bit, OTPROM, 8096 CPU, 20MHz, CMOS, PQFP80, SQFP-80
SB87C196NP INTEL

获取价格

Microcontroller, 16-Bit, OTPROM, 25MHz, CMOS, PQFP100, SQFP-100