SB840DC-T3

更新时间： 2024-11-09 04:05:43

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
4页	48K
描述
8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SB840DC-T3 数据手册

WTE

POWER SEMICONDUCTORS

SB820DC – SB8100DC

8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

PIN 1

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ K

D²PAK/TO-263

Min

Mechanical Data

Dim

Max

10.40

10.60

4.80

9.10

—

Case: D²PAK/TO-263, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

9.80

9.60

4.40

Polarity: See Diagram

Weight: 1.7 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1 -

PIN 3 -

8.50

Case, PIN 2

2.80

1.00

1.40

0.90

1.40

0.70

2.75

—

1.20

0.30

2.35

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

820DC 830DC 840DC 845DC 850DC 860DC 880DC 8100DC

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_C= 100°C

8.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

I^FSM

150

Forward Voltage

@I_F= 4.0A

V^FM

I^RM

0.55

0.75

0.85

Peak Reverse Current

@T_A= 25°C

0.5

At Rated DC Blocking Voltage @T_A= 100°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

C^j

400

3.0

°C/W

°C

R^ꢀ^JC

Operating and Storage Temperature Range

T^j, T^STG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB820DC – SB8100DC

1 of 4

12 3 4

中文翻译

下载PDF

与SB840DC-T3相关器件

型号	品牌	获取价格	描述	数据表
SB840DC-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 40V V(RRM), Silicon, TO-263AB, ROHS COM
SB840D-T3	WTE	获取价格	8.0A D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
SB840D-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 40V V(RRM), Silicon, TO-263AB, ROHS COM
SB840E	SIRECT	获取价格	Power Schottky Rectifier - 8Amp 40~100Volt
SB840-E	LRC	获取价格	Schottky Barrier Rectifiers Reverse Voltage 20 to 100V
SB840EH	SIRECT	获取价格	Power Schottky Rectifier - 8Amp 40~100Volt
SB840F	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
SB840F	PACELEADER	获取价格	ISOLATION SCHOTTKY BARRIER RECTIFIER
SB840F	WTE	获取价格	8.0A ISOLATION SCHOTTKY BARRIER RECTIFIER
SB840F	TRSYS	获取价格	ISOLATION SCHOTTKY BARRIER RECTIFIERS

与SB840DC-T3相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

SB840DC-T3

SB840DC-T3 数据手册

与SB840DC-T3相关器件

与SB840DC-T3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SB840DC-T3

SB840DC-T3 数据手册

与SB840DC-T3相关器件

与SB840DC-T3相关文章

您还可以找

您在本页遇到什么问题？