WTE
POWER SEMICONDUCTORS
Pb
SB820CT – SB8100CT
8.0A DUAL SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
B
!
!
!
!
!
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D
TO-220
C
Dim
A
B
C
D
E
Min
13.90
9.80
2.54
3.56
12.70
0.51
3.55 Ø
5.75
4.16
2.03
0.30
1.14
2.29
Max
15.90
10.70
3.43
G
F
A
PIN1
2
3
4.56
14.73
0.96
F
G
H
I
4.09 Ø
6.85
Mechanical Data
!
!
E
Case: TO-220, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
5.00
P
J
2.92
K
L
0.65
!
!
!
!
!
I
1.40
P
2.79
Mounting Position: Any
H
L
J
All Dimensions in mm
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 -
PIN 3 -
+
Case, PIN 2
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SB
SB
SB
SB
SB
SB
SB
SB
Characteristic
Symbol
Unit
820CT 830CT 840CT 845CT 850CT 860CT 880CT 8100CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
14
30
21
40
28
45
32
50
35
60
42
80
56
100
70
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current @TC = 95°C
8.0
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
I
FSM
150
A
Forward Voltage
@IF = 4.0A
VFM
IRM
0.55
0.75
0.85
V
Peak Reverse Current
At Rated DC Blocking Voltage @TA = 100°C
@TA = 25°C
0.5
50
mA
Typical Junction Capacitance (Note 1)
Cj
700
pF
°C
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB820CT – SB8100CT
1 of 4
© 2006 Won-Top Electronics