Datasheet > SB840

SB840

更新时间： 2024-11-10 14:52:15

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	126K
描述
Rectifier device Schottky Diode

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中文翻译

获取价格

数据手册

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SB840 数据手册

SB820 - SB8100

SCHOTTKY BARRIER RECTIFIER DIODES

VOLTAGE RANGE: 20 - 100V

CURRENT: 8 .0 A

Features

Schottky Barrier Chip

Guard Ring for Transient Protection

High Current Capability, Low Forward

Low Reverse Leakage Current

TO-220AC

Dim

Min

14.9

—

Max

15.1

10.5

2.87

4.06

14.22

0.94

3.91 Ø

6.86

4.70

2.79

0.64

1.40

5.20

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

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2.62

3.56

13.46

0.68

3.74 Ø

5.84

4.44

2.54

0.35

1.14

4.95

PIN1

Mechanical Data

Case: TO-220AC Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 2.24 grams (approx.)

Mounting Position: Any

All Dimensions in mm

PIN 1 +

PIN 2 -

Marking: Type Number

Case

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol

SB820 SB830 SB840 SB845 SB850 SB860 SB870 SB880 SB890 SB8100

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

VRRM

VRMS

VDC

100

Maximum DC blocking voltage

Maximum average forward rectified current

(see fig.1)

I(AV)

8.0

Peak forward surge current

IFSM

150.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

0.65

0.75

0.85

Maximum instantaneous forward voltage at 8.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

1.0

TA=100 C

15.0

300

50.0

250

Typical junction capacitance (NOTE 1)

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

RθJC

3.0

-65 to +125

-65 to +150

Storage temperature range

TSTG

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to case

1 of 2

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