Datasheet > SB580

SB580

更新时间： 2024-09-22 14:52:23

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1764K
描述
DO-27

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中文翻译

获取价格

数据手册

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SB580 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DO-27 Plastic-Encapsulate Diodes

SB520 THRU SB5100 Schottky Rectifier Diodes

Features

● I_F(AV)

DO-27

● VRRM

20V-100V

● High surge current capability

● Polarity: Color band denotes cathode

Applications

● Rectifier

Marking

● SB5XX

From 20 To 100

SB5

20 30 40 50 60 80 100

Symbol

Item

Unit

Conditions

Repetitive Peak Reverse Voltage

MaximumRMS Voltage

V_RRM

80 100

56 70

80 100

V_RMS

Maximum DC Blocking Voltage

V_DC

60Hz Half-sine wave,

Resistance load,TL(Fig.1)

I_F(AV)

Average Forward Current

5.0

60Hz Half-sine wave ,

1 cycle , Ta =25℃

Surge(Non-repetitive)Forward

Current

I_FSM

150

-55 ~ +125

-55 ~ +150

T_J

℃

Junction Temperature

Storage Temperature

T_STG

Electrical Characteristics (T=25℃ Unless otherwise specified）

SB5

30 40 50 60 80 100

Item

Symbol Unit

Test Condition

Maximum Peak Forward Voltage

V_FM

I_FM=5.0A

0.55

0.7

0.1

0.85

I_RRM1

I_RRM2

T =25℃

Maximum Peak Reverse Current

Typical junction capacitance

V_RM=V_RRM

Ta=125℃

Measured at 1MHz and applied

reverse voltage of 4.0V D.C.

C_J

400

500

R_θ

Between junction and ambient

J-A

℃/W

Typical Thermal Resistance

R_θ

Between junction and lead

J-L

Notes:

Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

Rev. - 1.0

www.jscj-elec.com

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