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SB30-18 PDF预览

SB30-18

更新时间: 2024-10-28 22:22:23
品牌 Logo 应用领域
三洋 - SANYO 二极管局域网
页数 文件大小 规格书
3页 85K
描述
180V, 3A Rectifier

SB30-18 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.85 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:60 A元件数量:2
相数:1端子数量:3
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:180 V
最大反向电流:300 µA最大反向恢复时间:0.04 µs
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

SB30-18 数据手册

 浏览型号SB30-18的Datasheet PDF文件第2页浏览型号SB30-18的Datasheet PDF文件第3页 
Ordering number:EN2584B  
SB30-18  
Schottky Barrier Diode (Twin Type · Cathod Common)  
180V, 3A Rectifier  
Applications  
Package Dimensions  
unit:mm  
· High frequency rectification (switching regulators,  
converters, choppers).  
1159B  
[SB30-18]  
Features  
· Low forward voltage (V max=0.85V).  
F
· Fast reverse recovery time (trr max=40ns).  
· Low switching noise.  
· Low leakage current and high reliability due to  
highly reliable planar structure.  
1:Anode  
2:Cathode  
JEDEC:TO-220AB  
3:Anode  
EIAJ:SC-46  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
V
180  
190  
3
V
V
RRM  
V
RSM  
I
A
50Hz, resistive load, Tc=108˚C  
50Hz sine wave, 1 cycle  
O
Surge Forward Current  
I
60  
A
FSM  
Junction Temperature  
Tj  
–55 to +125  
–55 to +125  
˚C  
˚C  
Storage Temperature  
Tstg  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Conditons  
=1.5mA, Tj=25˚C, *  
Unit  
Symbol  
min  
180  
max  
Reverse Voltage  
V
R
V
F
V
V
I
R
Forward Voltage  
0.85  
I =1.2A, Tj=25˚C, *  
F
Reverse Current  
I
0.3  
40  
mA  
ns  
V
=90V, Tj=25˚C, *  
R
R
Reverse Recovery Time  
Thermal Resistance  
trr  
I =2A, Tj=25˚C, *, –dI /dt=10A/µs  
F
F
Rthj-c  
Junction-Case:Smoothed DC  
3.0  
˚C/W  
Note*:Value per element  
Electrical Connection  
1:Anode  
2:Cathode  
3:Anode  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
41098HA (KT)/5248TA, TS No.2584-1/3  

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