Leaded Schottky Barrier Rectifiers
Comchip
S M D D i o d e S p e c i a l i s t
SB220-G Thru. SB2100-G
Voltage: 20 to 100 V
Current: 2.0 A
RoHS Device
DO-41
Features
-Low drop down voltage.
1.0(25.4) Min.
-Metal-Semiconductor junction with guard ring
-High surge current capability
.107(2.7)
.080(2.0)
-Silicon epitaxial planar chips.
-For use in low voltage, high efficiency inverters,
free wheeling, and polarity protection applications
.205(5.2)
.160(4.1)
-Lead-free part, meet RoHS requirements.
1.0(25.4) Min.
Mechanical data
.034(0.86)
.028(0.70)
-Epoxy: UL94-V0 rated flame retardant
-Case: Molded plastic body DO-41
-Terminals: Solderable per MIL-STD-750 Method 2026
-Polarity: Color band denotes cathode end
-Mounting Position: Any
Dimensions in inches and (millimeter)
-Weight: 0.4 grams
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
SB
SB
SB
SB
SB
SB
SB
Symbol
Parameter
Unit
240-G
220-G
245-G
250-G
260-G
280-G 2100-G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
20
14
20
40
28
40
45
30
45
50
35
50
60
42
60
80
56
80
100
70
V
V
V
Maximum DC blocking voltage
100
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA=75°C, See Figure 1
I(AV)
A
2.0
50
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load
(JEDEC method) TL=110°C
IFSM
VF
IR
A
V
Maximum forward voltage at 2.0A
0.50
0.70
0.85
0.5
Maximum DC reverse current
At rated DC blocking voltage
T
A
=25°C
mA
T
A
=100°C
10
5
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
pF
CJ
150
250
RθJA
RθJL
35.0
20.0
°C/W
Operating junction temperature range
Storage temperature range
TJ
-55 to +125
-55 to +150
°C
°C
TSTG
-55 to +150
NOTES:
1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts.
2. Thermal resistance junction to ambient and junction to lead.
REV:A
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Comchip Technology CO., LTD.