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SB280E-G PDF预览

SB280E-G

更新时间: 2024-11-09 21:19:47
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
2页 443K
描述
DIODE SCHOTTKY 80V 2A DO15

SB280E-G 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliant风险等级:5.75
二极管类型:RECTIFIER DIODEBase Number Matches:1

SB280E-G 数据手册

 浏览型号SB280E-G的Datasheet PDF文件第2页 
Low VF/ESD Leaded Schottky Barrier Rectifiers  
SB220E-G thru SB2100E-G "-G" : RoHS Device  
Voltage Range: 20 to 100 V  
Current: 2.0 A  
FEATURES  
DO-15  
• Low drop down voltage  
• 2.0A operation at TA=75°C with no thermal runaway  
• For use in low voltage, high frequency invertors free  
wheeling and polarity protection  
1.0(25.4) Min.  
• Silicon epitaxial planar chips  
.140(3.6)  
.104(2.6)  
• Electrostatic discharge (ESD) test under IEC61000-4-2:  
standard: >15KV (air) & 8KV (contact)  
• Lead-free part, meet RoHS requirements  
.300(7.6)  
.230(5.8)  
MECHANICAL DATA  
• Case: Molded plastic body DO-15  
• Epoxy: UL94-V0 rated flame retardant  
• Terminals: Solderable per MIL-STD-750 Method 2026  
• Polarity: Color band denotes cathode end  
• Mounting Position: Any  
1.0(25.4) Min.  
.034(0.86)  
.028(0.71)  
• Weight: 0.015 ounces, 0.4 grams  
Unit :inch(mm)  
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified  
Symbols 220E 240E 245E 250E 260E 280E 2100E Units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
40  
28  
40  
45  
30  
45  
50  
35  
50  
60  
42  
60  
80 100 Volts  
56 70 Volts  
Maximum DC Blocking Voltage  
80 100 Volts  
Amps  
Maximum Average Forward Rectified Current  
0.375” (9.5mm) lead length at TA=75°C, See Figure 1  
IAV  
2.0  
50  
Peak Forward Surge Current  
8.3mS single half sine-wave superimposed on  
rated load (JEDEC Method) TL=110°C  
IFSM  
Amps  
Maximum Forward Voltage at 2.0A (Note 1)  
VF  
IR  
0.50  
0.70  
0.85  
10  
Volts  
mA  
0.5  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
TA= 25°C  
TA=100°C  
20  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
CJ  
170  
pF  
RθJA  
RθJL  
50.0  
25.0  
°C/W  
Operating Junction Temperature Range  
TJ  
-65 ~ +125  
-65 ~ +150  
-65 ~ +150 °C  
°C  
Storage Temperature Range  
TSTG  
Note 1. Pulse test: 300µS pulse width, 1% duty cycle  
2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts  
3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.375” (9.5mm) lead length  
Page 1  
MDS0906003A  

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