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SB2050PT

更新时间： 2024-11-23 22:43:31

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
3页	37K
描述
20A SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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SB2050PT 数据手册

WTE

PO WER SEMICONDUCTORS

SB2030PT – SB2060PT

20A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring for Transient Protection

High Current Capability, Low Forward

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

TO-3P

Dim

Min

3.20

Max

3.50

4.59

5.16

20.80

19.70

2.10

21.30

20.20

2.40

PIN1

0.51

0.76

15.90

1.70

16.40

2.70

3.10 Ø

3.50

3.30 Ø

4.51

Mechanical Data

Case: Molded Plastic

5.20

5.70

Terminals: Plated Leads Solderable per

MIL-STD-750, Method 2026

Polarity: As Marked on Body

Weight: 5.6 grams (approx.)

Mounting Position: Any

1.12

1.22

2.90

3.30

11.70

12.80

4.30 Typical

All Dimensions in mm

Marking: Type Number

PIN 1 -

PIN 3 -

Case PIN 2

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

2030PT 2035PT 2040PT 2045PT 2050PT 2060PT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

RMS Reverse Voltage

V^R(RMS)

I^O

24.5

31.5

Average Rectified Output Current

@T_C= 100°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

250

Forward Voltage

@I_F= 10A

V^FM

I^RM

0.55

0.75

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

1.0

Typical Junction Capacitance (Note 1)

C^j

1100

2.5

K/W

°C

Typical Thermal Resistance Junction to Case (Note 2)

Operating and Storage Temperature Range

R^ꢀ^JC

T^j, T^STG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB2030PT – SB2060PT

1 of 3

12 3

中文翻译

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