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SB180T26R PDF预览

SB180T26R

更新时间: 2024-11-07 14:44:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
3页 43K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 80V V(RRM), Silicon, DO-41

SB180T26R 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.49其他特性:FREE WHEELING DIODE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:1.25 W认证状态:Not Qualified
最大重复峰值反向电压:80 V表面贴装:NO
技术:SCHOTTKY端子形式:WIRE
端子位置:AXIALBase Number Matches:1

SB180T26R 数据手册

 浏览型号SB180T26R的Datasheet PDF文件第2页浏览型号SB180T26R的Datasheet PDF文件第3页 
SB120 - SB1100  
Features  
1.0 ampere operation at TA = 75°C  
with no thermal runaway.  
For use in low voltage, high frequency  
inverters free wheeling, and polarity  
protection applications.  
DO-41  
COLOR BAND DENOTES CATHODE  
Schottky Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Value  
Symbol  
Parameter  
Units  
120 130 140 150 160 180 1100  
VRRM  
IF(AV)  
Maximum Repetitive Reverse Voltage  
20  
30  
40  
50  
60  
80  
100  
V
A
Average Rectified Forward Current  
.375 " lead length @ TA = 75°C  
Non-repetitive Peak Forward Surge Current  
8.3 ms Single Half-Sine-Wave  
1.0  
IFSM  
30  
A
Storage Temperature Range  
-65 to +125  
-65 to +125  
°C  
°C  
Tstg  
TJ  
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
1.25  
80  
W
RθJA  
C/W  
°
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Device  
Symbol  
Parameter  
Units  
120 130 140 150 160 180 1100  
500 700 850  
0.5  
VF  
IR  
Forward Voltage @ 1.0 A  
mV  
mA  
mA  
Reverse Current @ rated VR  
TA = 25°C  
TA = 100°C  
10  
Irr  
Maximum Full Load Reverse Current, Full Cycle  
TA = 75°C  
30  
mA  
Total Capacitance  
110  
pF  
CT  
VR = 4.0 V, f = 1.0 MHz  
2001 Fairchild Semiconductor Corporation  
SB120-SB1100, Rev. C  

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