SB180-TB

更新时间： 2024-11-07 04:05:51

品牌	Logo	应用领域
WTE		整流二极管肖特基二极管瞄准线
页数	文件大小	规格书
4页	62K
描述
1.0A SCHOTTKY BARRIER DIODE

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中文翻译

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SB180-TB 数据手册

WTE

POWER SEMICONDUCTORS

SB120 – SB1100

1.0A SCHOTTKY BARRIER DIODE

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D

Mechanical Data

DO-41

Dim

Min

25.4

4.06

0.71

2.00

Max

Case: DO-41, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.34 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

—

5.21

0.864

2.72

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol SB120 SB130 SB140 SB150 SB160 SB180 SB1100 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_L= 100°C

(Note 1)

1.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

C^j

0.50

110

0.70

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JL

R^ꢀ^JA

°C/W

°C

T^j, T^STG

-65 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB120 – SB1100

1 of 4

12 3 4

中文翻译

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与SB180-TB相关器件

型号	品牌	获取价格	描述	数据表
SB180-TB-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 80V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLAS
SB180T-G	COMCHIP	获取价格	Leaded Schottky Barrier Rectifiers
SB180TR	FAIRCHILD	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 80V V(RRM), Silicon, DO-41, DO-41, 2 PIN
SB181A	ETC	获取价格	ABSCHLUSSSTUECK OHNE ZUGENTLASTUNG 10POL
SB181CCA	ETC	获取价格	ABSCHLUSSSTUECK MIT ZUGENTLASTUNG 10POL
SB1820	SEMIKRON	获取价格	Schottky barrier rectifiers diodes
SB1830	SEMIKRON	获取价格	Schottky barrier rectifiers diodes
SB1840	SEMIKRON	获取价格	Schottky barrier rectifiers diodes
SB18P-HVQ-15	JST	获取价格	具有0.64mm方形接线柱的2.5sb头可用于将任何2.5mm插座连接到PC板。它们还可用
SB18P-HVQ-16	JST	获取价格	具有0.64mm方形接线柱的2.5sb头可用于将任何2.5mm插座连接到PC板。它们还可用

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