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SB180B-G PDF预览

SB180B-G

更新时间: 2024-11-26 07:17:55
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管
页数 文件大小 规格书
3页 57K
描述
Leaded Schottky Barrier Rectifiers

SB180B-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
Is Samacsys:N其他特性:FREE WHEELING DIODE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:80 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SB180B-G 数据手册

 浏览型号SB180B-G的Datasheet PDF文件第2页浏览型号SB180B-G的Datasheet PDF文件第3页 
Leaded Schottky Barrier Rectifiers  
Comchip  
S M D D i o d e S p e c i a l i s t  
SB120-G Thru. SB1100-G  
Voltage: 20 to 100 V  
Current: 1.0 A  
RoHS Device  
DO-41  
Features  
-Low drop down voltage.  
-Metal-Semiconductor junction with guard ring  
-High surge current capability  
1.0(25.4) Min.  
.107(2.7)  
.080(2.0)  
-Silicon epitaxial planar chips.  
-For use in low voltage, high efficiency inverters,  
free wheeling, and polarity protection applications  
.205(5.2)  
.160(4.1)  
-Lead-free part, meet RoHS requirements.  
Mechanical data  
1.0(25.4) Min.  
-Epoxy: UL94-V0 rated flame retardant  
-Case: Molded plastic body DO-41  
-Terminals: Solderable per MIL-STD-750 Method 2026  
-Polarity: Color band denotes cathode end  
-Mounting Position: Any  
.034(0.86)  
.028(0.70)  
Dimensions in inches and (millimeter)  
-Weight: 0.34grams  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Ratings at Ta=25°C unless otherwise noted.  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Symbol  
Parameter  
Unit  
140-G  
120-G  
145-G  
150-G  
160-G  
180-G 1100-G  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
40  
28  
40  
45  
30  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
0.375” (9.5mm) lead length at TA=75°C, See Figure 1  
I(AV)  
A
1.0  
30  
Peak forward surge current  
8.3ms single half sine-wave superimposed on rated load  
(JEDEC method) TL=110°C  
IFSM  
VF  
IR  
A
V
Maximum forward voltage at 1.0A  
0.50  
0.70  
0.85  
30  
0.5  
Maximum DC reverse current  
At rated DC blocking voltage  
T
A
=25°C  
mA  
T
A
=100°C  
10  
5
Typical junction capacitance (Note 1)  
Typical thermal resistance (Note 2)  
pF  
CJ  
110  
80  
RθJA  
RθJL  
50.0  
30.0  
°C/W  
Operating junction temperature range  
Storage temperature range  
TJ  
-55 to +125  
-55 to +150  
°C  
°C  
TSTG  
-55 to +150  
NOTES:  
1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts.  
2. Thermal resistance junction to ambient and junction to lead.  
REV:A  
Page 1  
QW-BB040  
Comchip Technology CO., LTD.  

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