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SA5V0A-G PDF预览

SA5V0A-G

更新时间: 2024-11-03 12:59:03
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
7页 145K
描述
Transient Suppressor,

SA5V0A-G 技术参数

是否Rohs认证:符合生命周期:End Of Life
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.79
Is Samacsys:N二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SA5V0A-G 数据手册

 浏览型号SA5V0A-G的Datasheet PDF文件第2页浏览型号SA5V0A-G的Datasheet PDF文件第3页浏览型号SA5V0A-G的Datasheet PDF文件第4页浏览型号SA5V0A-G的Datasheet PDF文件第5页浏览型号SA5V0A-G的Datasheet PDF文件第6页浏览型号SA5V0A-G的Datasheet PDF文件第7页 
Axial Lead Transient Voltage Suppressor  
SA5V0-G Thru. SA191-G Series  
Working Peak Reverse Voltage: 5.0 to 190 Volts  
Peak Pulse Power: 500 Watts  
RoHS Device  
Features  
-Glass passivated chip.  
DO-15  
0.033(0.84)  
0.028(0.71)  
-Low leakage.  
1.000(25.40)  
MIN.  
-500W peak pulse power capability with a  
10/1000μs waveform, repetitive rate (duty  
cycle): 0.01%.  
-Uni and Bidirectional unit.  
-Excellent clamping capability.  
0.300(7.63)  
0.230(5.85)  
-Very fast response time.  
-RoHS compliant.  
0.142(3.61)  
0.102(2.60)  
Mechanical data  
1.000(25.40)  
MIN.  
-Case: Molded plastic DO-15  
-Epoxy: UL 94V-0 rate flame retardant  
Dimensions in inches and (millimeter)  
-Terminals: Axial leads solderable per MIL-STD-  
202, Method 208  
-Polarity: Color band denotes positive end  
(cathode)  
-Mounting position: Any  
Maximum Ratings and Electrical Characteristics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Value  
Characteristics  
Symbol  
Units  
Peak power dissipation with a 10/1000μS  
waveform (Note 1)  
PPP  
500  
W
Peak pulse current with a 10/1000μS  
IPPM  
PD  
See Next Table  
3.0  
A
waveform (Note 1)  
Power dissipation on infinite heatsink at  
TL=75 OC  
W
Peak forward surge current, 8.3ms single  
half sine-wave uni-directional only (Note 2)  
IFSM  
70  
A
Maximum instantaneous forward voltage  
at 25A for uni-directional only (Note 3)  
VF  
3.5/5.0  
V
Operating junction and storage temperature  
range  
OC  
TJ,TSTG  
-55 to +150  
NTOES:  
(1) Non-repetitive current pulse per fig.5 and derated above TA=25°C per fig. 1.  
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.  
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V.  
REV:A  
Page 1  
QW-BTV16  
Comchip Technology CO., LTD.  

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