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S8DL-TP PDF预览

S8DL-TP

更新时间: 2024-10-28 20:52:11
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 234K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

S8DL-TP 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-214AB包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.19其他特性:LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
表面贴装:YES端子面层:Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

S8DL-TP 数据手册

 浏览型号S8DL-TP的Datasheet PDF文件第2页浏览型号S8DL-TP的Datasheet PDF文件第3页 
M C C  
S8AL  
THRU  
S8ML  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
Glass Passivated Chip  
Epoxy meets UL 94 V-0 flammability rating  
8 Amp Surface Mount  
·
Glass Passivated  
·
Moisture Sensitivity Level 1  
High Surge Current Capability  
Low Leakage  
Rectifier  
50 - 1000 Volts  
Halogen free available upon request by adding suffix "-HF"  
Maximum Ratings  
SMC (DO-214AB)  
Operating Junction Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
G
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Reccurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
H
D
S8AL  
S8BL  
S8DL  
S8GL  
S8JL  
S8KL  
S8ML  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
S8AL  
S8BL  
S8DL  
S8GL  
S8JL  
S8KL  
S8ML  
140V  
280V  
420V  
560V  
700V  
A
C
E
B
800V  
1000V  
F
DIMENSIONS  
INCHES  
MIN  
MM  
MIN  
DIM  
A
MAX  
.103  
.128  
.008  
.012  
.060  
.320  
MAX  
2.62  
NOTE  
.079  
.108  
2.00  
2.75  
B
3.25  
C
.002  
0.051  
0.152  
0.76  
7.75  
6.60  
0.203  
0.305  
1.52  
8.13  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
D
.006  
.030  
E
Average Forward  
Current  
IF(AV)  
8.0A  
TL = 100°C  
F
..305  
.260  
G
H
.280  
.245  
7.11  
6.22  
.220  
5.59  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 8.0A;  
TJ = 25°C*  
SUGGESTED SOLDER  
PAD LAYOUT  
0.190  
A  
TJ = 25°C  
100µA TJ = 100°C  
0.125”  
Typical Junction  
Capacitance  
CJ  
150pF  
Measured at  
1.0MHz, VR=4.0V  
Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.  
0.070”  
*Pulse test: Pulse width 300 µsec, Duty cycle 1%  
www.mccsemi.com  
Revision: C  
2014/03/07  
1 of 3  

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