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S8D-TP PDF预览

S8D-TP

更新时间: 2024-10-28 20:49:51
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
2页 89K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, HSMC, 2 PIN

S8D-TP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-214AB包装说明:ROHS COMPLIANT, PLASTIC, HSMC, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.57应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:300 A
元件数量:1相数:1
端子数量:2最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:200 V
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

S8D-TP 数据手册

 浏览型号S8D-TP的Datasheet PDF文件第2页 
S8A  
THRU  
S8M  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
8 Amp  
Silicon Rectifier  
50 to 1000 Volts  
For Surface Mount Applications  
Extremely Low Thermal Resistance  
Easy Pick And Place  
High Temp Soldering: 250°C for 10 Seconds At Terminals  
High Current Capability  
DO-214AB  
(SMCJ) (Round Lead)  
Maximum Ratings  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 8°C/W Junction To Lead  
H
Cathode Band  
Microsemi  
Part  
Maximum  
Recurrent  
Maximum  
RMS  
Maximum  
DC  
J
Device  
Number  
Marking Peak Reverse  
Voltage  
Voltage  
Blocking  
Voltage  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
S8A  
S8B  
S8D  
S8G  
S8J  
S8A  
S8B  
S8D  
S8G  
S8J  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
A
C
140V  
280V  
420V  
560V  
700V  
E
D
B
F
S8K  
S8M  
S8K  
S8M  
G
DIMENSIONS  
INCHES  
MIN  
.200  
.177  
.002  
---  
.053  
.168  
.320  
.239  
.234  
MM  
MIN  
5.08  
4.70  
.05  
DIM  
A
B
C
D
E
MAX  
.214  
.203  
.005  
.02  
.067  
.179  
.330  
.243  
.240  
MAX  
5.43  
5.30  
.13  
NOTE  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
---  
.51  
1.35  
4 .27  
8.13  
6.08  
5.95  
1.70  
4.55  
8.38  
6.18  
6.10  
Average Forward  
Current  
IF(AV)  
8.0A  
TJ = 75°C  
F
G
H
J
Peak Forward Surge  
Current  
IFSM  
300A  
8.3ms, half sine  
Maximum  
SUGGESTED SOLDER  
PAD LAYOUT  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.20V  
IFM = 8.0A;  
TJ = 25°C*  
0.190  
10µA  
100µA TJ = 100°C  
TJ = 25°C  
0.200  
Typical Junction  
Capacitance  
CJ  
150pF Measured at  
1.0MHz, VR=4.0V  
0.070”  
*Pulse test: Pulse width 200 µsec, Duty cycle 2%  
www.mccsemi.com  
Revision: 2  
2003/04/30  

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