Datasheet > S8050_15

S8050_15

更新时间： 2022-02-26 10:55:46

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描述
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

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S8050_15 数据手册

S8050

NPN SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATING (T_A=25°C, unless otherwise specified )

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

700

Collector Dissipation(T_A=25°C)

Junction Temperature

Storage Temperature

P_C

T_J

150

°C

T_STG

-65 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

BV_CBOI_C=100A, I_E=0

BV_CEOI_C=1mA, I_B=0

BV_EBOI_E=100μA, Ic=0

I_CBO

I_EBO

h_FE1

h_FE2

h_FE3

V_CB=30V, I_E=0

μA

Emitter Cut-Off Current

V_EB=5V, I_C=0

100

V_CE=1V, I_C=1mA

V_CE=1V, I_C=150 mA

V_CE=1V, I_C=500mA

100

120

DC Current Gain

400

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

V_CE(SAT) I_C=500mA, I_B=50mA

V_BE(SAT) I_C=500mA, I_B=50mA

0.5

1.2

1.0

V_BE

f_T

V_CE=1V, I_C=10mA

V_CE=10V, I_C=50mA

V_CB=10V, I_E=0, f=1MHz

100

MHz

C_ob

9.0



CLASSIFICATION OF h_FE2

RANK

RANGE

120-200

160-300

280-400

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

QW-R201-013.D

www.unisonic.com.tw

123 4

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