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S72NS512PE0AJGLG3 PDF预览

S72NS512PE0AJGLG3

更新时间: 2024-11-20 03:39:31
品牌 Logo 应用领域
飞索 - SPANSION 闪存存储内存集成电路动态存储器
页数 文件大小 规格书
14页 463K
描述
MirrorBit Flash Memory and DRAM

S72NS512PE0AJGLG3 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:BGA包装说明:11 X 10 MM, 0.50 MM PITCH, LEAD FREE, FBGA-133
针数:133Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.63Is Samacsys:N
其他特性:DRAM IS ORGANISED AS 16M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLEJESD-30 代码:R-PBGA-B133
JESD-609代码:e1长度:11 mm
内存密度:536870912 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:133
字数:33554432 words字数代码:32000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:32MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.1 mm最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:BALL端子节距:0.5 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
宽度:10 mmBase Number Matches:1

S72NS512PE0AJGLG3 数据手册

 浏览型号S72NS512PE0AJGLG3的Datasheet PDF文件第2页浏览型号S72NS512PE0AJGLG3的Datasheet PDF文件第3页浏览型号S72NS512PE0AJGLG3的Datasheet PDF文件第4页浏览型号S72NS512PE0AJGLG3的Datasheet PDF文件第5页浏览型号S72NS512PE0AJGLG3的Datasheet PDF文件第6页浏览型号S72NS512PE0AJGLG3的Datasheet PDF文件第7页 
S72NS-P Based MCPs/PoPs  
MirrorBitFlash Memory and DRAM  
128/256/512 Mb (8/16/32 M x 16 bit), 1.8 Volt-only,  
Multiplexed Simultaneous Read/Write, Burst Mode Flash  
Memory  
S72NS-P Based MCPs/PoPs Cover Sheet  
128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus  
Data Sheet (Advance Information)  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. Each product described herein may be designated as Advance Information,  
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.  
Publication Number S72NS-P_00  
Revision 01  
Issue Date September 6, 2006  

与S72NS512PE0AJGLG3相关器件

型号 品牌 获取价格 描述 数据表
S72NS512PE0KFDG00 SPANSION

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Memory Circuit, 32MX16, CMOS, PBGA128, 12 X 12 MM, 0.65 MM PITCH, LEAD FREE, FBGA-128
S72NS512PE0KFDG02 SPANSION

获取价格

Memory Circuit, 32MX16, CMOS, PBGA128, 12 X 12 MM, 0.65 MM PITCH, LEAD FREE, FBGA-128
S72NS512PE0KFDG03 SPANSION

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Memory Circuit, 32MX16, CMOS, PBGA128, 12 X 12 MM, 0.65 MM PITCH, LEAD FREE, FBGA-128
S72NS512PE0KFDGC2 SPANSION

获取价格

Memory Circuit, 32MX16, CMOS, PBGA128, 12 X 12 MM, 0.65 MM PITCH, LEAD FREE, FBGA-128
S72NS512PE0KFDJ02 SPANSION

获取价格

Memory Circuit, 32MX16, CMOS, PBGA128, 12 X 12 MM, 0.65 MM PITCH, LEAD FREE, FBGA-128
S72NS512PE0KFDJ03 SPANSION

获取价格

Memory Circuit, 32MX16, CMOS, PBGA128, 12 X 12 MM, 0.65 MM PITCH, LEAD FREE, FBGA-128
S72NS512PE0KFDJC3 SPANSION

获取价格

Memory Circuit, 32MX16, CMOS, PBGA128, 12 X 12 MM, 0.65 MM PITCH, LEAD FREE, FBGA-128
S72NS512PE0KFDJG0 SPANSION

获取价格

Memory Circuit, 32MX16, CMOS, PBGA128, 12 X 12 MM, 0.65 MM PITCH, LEAD FREE, FBGA-128
S72NS512PE0KFDL03 SPANSION

获取价格

Memory Circuit, 32MX16, CMOS, PBGA128, 12 X 12 MM, 0.65 MM PITCH, LEAD FREE, FBGA-128
S72NS512PE0KFDLC0 SPANSION

获取价格

Memory Circuit, 32MX16, CMOS, PBGA128, 12 X 12 MM, 0.65 MM PITCH, LEAD FREE, FBGA-128