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S72NS512PE0KFFLC3 PDF预览

S72NS512PE0KFFLC3

更新时间: 2024-11-20 13:50:35
品牌 Logo 应用领域
飞索 - SPANSION 动态存储器内存集成电路
页数 文件大小 规格书
14页 773K
描述
Memory Circuit, 32MX16, CMOS, PBGA128, 12 X 12 MM, 0.48 MM PITCH, LEAD FREE, FBGA-128

S72NS512PE0KFFLC3 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:128
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.63Is Samacsys:N
其他特性:DRAM IS ORGANISED AS 16M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLEJESD-30 代码:S-PBGA-B128
长度:12 mm内存密度:536870912 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
功能数量:1端子数量:128
字数:33554432 words字数代码:32000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:32MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:SQUARE封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态:Not Qualified座面最大高度:1.05 mm
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.65 mm
端子位置:BOTTOM宽度:12 mm
Base Number Matches:1

S72NS512PE0KFFLC3 数据手册

 浏览型号S72NS512PE0KFFLC3的Datasheet PDF文件第2页浏览型号S72NS512PE0KFFLC3的Datasheet PDF文件第3页浏览型号S72NS512PE0KFFLC3的Datasheet PDF文件第4页浏览型号S72NS512PE0KFFLC3的Datasheet PDF文件第5页浏览型号S72NS512PE0KFFLC3的Datasheet PDF文件第6页浏览型号S72NS512PE0KFFLC3的Datasheet PDF文件第7页 
S72NS-P MCP/PoP Memory System  
Solutions  
MirrorBit® Flash Memory and DRAM  
128/256/512 Mb (8/16/32 M x 16 bit), 1.8 Volt-only, Multiplexed  
Simultaneous Read/Write, Burst Mode Flash Memory  
128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus  
S72NS-P MCP/PoP Memory System Solutions Cover Sheet  
Data Sheet (Advance Information)  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. Each product described herein may be designated as Advance Information,  
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.  
Publication Number S72NS-P_00  
Revision 07  
Issue Date September 24, 2008  

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