生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TFBGA, | 针数: | 128 |
Reach Compliance Code: | unknown | HTS代码: | 8542.32.00.71 |
风险等级: | 5.63 | Is Samacsys: | N |
其他特性: | DRAM IS ORGANISED AS 16M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE | JESD-30 代码: | S-PBGA-B128 |
长度: | 12 mm | 内存密度: | 536870912 bit |
内存集成电路类型: | MEMORY CIRCUIT | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 128 |
字数: | 33554432 words | 字数代码: | 32000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 组织: | 32MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | SQUARE | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
认证状态: | Not Qualified | 座面最大高度: | 1.05 mm |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.65 mm |
端子位置: | BOTTOM | 宽度: | 12 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S72NS512PE0KFFLG0 | SPANSION |
获取价格 |
Memory Circuit, 32MX16, CMOS, PBGA128, 12 X 12 MM, 0.48 MM PITCH, LEAD FREE, FBGA-128 | |
S72NS512PE0KJBGC0 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0KJBGC2 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0KJBGC3 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0KJBGG0 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0KJBGG2 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0KJBGG3 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0KJBLC0 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0KJBLC2 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0KJBLC3 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM |