生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TFBGA, | 针数: | 133 |
Reach Compliance Code: | unknown | HTS代码: | 8542.32.00.71 |
风险等级: | 5.63 | Is Samacsys: | N |
其他特性: | DRAM IS ORGANISED AS 16M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE | JESD-30 代码: | R-PBGA-B133 |
JESD-609代码: | e1 | 长度: | 11 mm |
内存密度: | 536870912 bit | 内存集成电路类型: | MEMORY CIRCUIT |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 133 | 字数: | 33554432 words |
字数代码: | 32000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 32MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 认证状态: | Not Qualified |
座面最大高度: | 1.1 mm | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子面层: | TIN SILVER COPPER |
端子形式: | BALL | 端子节距: | 0.5 mm |
端子位置: | BOTTOM | 宽度: | 10 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S72NS512PE0AJGG03 | SPANSION |
获取价格 |
Memory Circuit, 32MX16, CMOS, PBGA133, 11 X 10 MM, 0.50 MM PITCH, LEAD FREE, FBGA-133 | |
S72NS512PE0AJGGC | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0AJGGC0 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0AJGGC2 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0AJGGC3 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0AJGGG | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0AJGGG0 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0AJGGG2 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0AJGGG3 | SPANSION |
获取价格 |
MirrorBit Flash Memory and DRAM | |
S72NS512PE0AJGJ03 | SPANSION |
获取价格 |
Memory Circuit, 32MX16, CMOS, PBGA133, 11 X 10 MM, 0.50 MM PITCH, LEAD FREE, FBGA-133 |