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S72NS512PE0AJGG00 PDF预览

S72NS512PE0AJGG00

更新时间: 2024-11-20 13:36:07
品牌 Logo 应用领域
飞索 - SPANSION 动态存储器内存集成电路
页数 文件大小 规格书
14页 773K
描述
Memory Circuit, 32MX16, CMOS, PBGA133, 11 X 10 MM, 0.50 MM PITCH, LEAD FREE, FBGA-133

S72NS512PE0AJGG00 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:133
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.63Is Samacsys:N
其他特性:DRAM IS ORGANISED AS 16M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLEJESD-30 代码:R-PBGA-B133
JESD-609代码:e1长度:11 mm
内存密度:536870912 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16功能数量:1
端子数量:133字数:33554432 words
字数代码:32000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:32MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH认证状态:Not Qualified
座面最大高度:1.1 mm最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.5 mm
端子位置:BOTTOM宽度:10 mm
Base Number Matches:1

S72NS512PE0AJGG00 数据手册

 浏览型号S72NS512PE0AJGG00的Datasheet PDF文件第2页浏览型号S72NS512PE0AJGG00的Datasheet PDF文件第3页浏览型号S72NS512PE0AJGG00的Datasheet PDF文件第4页浏览型号S72NS512PE0AJGG00的Datasheet PDF文件第5页浏览型号S72NS512PE0AJGG00的Datasheet PDF文件第6页浏览型号S72NS512PE0AJGG00的Datasheet PDF文件第7页 
S72NS-P MCP/PoP Memory System  
Solutions  
MirrorBit® Flash Memory and DRAM  
128/256/512 Mb (8/16/32 M x 16 bit), 1.8 Volt-only, Multiplexed  
Simultaneous Read/Write, Burst Mode Flash Memory  
128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus  
S72NS-P MCP/PoP Memory System Solutions Cover Sheet  
Data Sheet (Advance Information)  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. Each product described herein may be designated as Advance Information,  
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.  
Publication Number S72NS-P_00  
Revision 07  
Issue Date September 24, 2008  

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