是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | FBGA, BGA84,10X12,32 | Reach Compliance Code: | unknown |
风险等级: | 5.69 | 最长访问时间: | 80 ns |
JESD-30 代码: | R-PBGA-B84 | JESD-609代码: | e1 |
内存集成电路类型: | MEMORY CIRCUIT | 混合内存类型: | FLASH+PSRAM |
湿度敏感等级: | 3 | 端子数量: | 84 |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA84,10X12,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 电源: | 1.8 V |
认证状态: | Not Qualified | 子类别: | Other Memory ICs |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S71WS256PD0HF3HR2 | SPANSION |
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1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM | |
S71WS256PD0HF3HR3 | SPANSION |
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1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM | |
S71WS256PD0HF3HV0 | SPANSION |
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1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM | |
S71WS256PD0HF3HV2 | SPANSION |
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1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM | |
S71WS256PD0HF3HV3 | SPANSION |
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1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM | |
S71WS256PD0HF3SL0 | SPANSION |
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1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM | |
S71WS256PD0HF3SL2 | SPANSION |
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1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM | |
S71WS256PD0HF3SL3 | SPANSION |
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1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM | |
S71WS256PD0HF3SR0 | SPANSION |
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1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM | |
S71WS256PD0HF3SR2 | SPANSION |
获取价格 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM |