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S71WS256PD0HF3SR2 PDF预览

S71WS256PD0HF3SR2

更新时间: 2024-11-18 04:21:15
品牌 Logo 应用领域
飞索 - SPANSION 闪存
页数 文件大小 规格书
10页 274K
描述
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM

S71WS256PD0HF3SR2 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
针数:84Reach Compliance Code:unknown
HTS代码:8542.32.00.71风险等级:5.61
最长访问时间:80 nsJESD-30 代码:R-PBGA-B84
JESD-609代码:e1长度:11.6 mm
内存密度:268435456 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16混合内存类型:FLASH+PSRAM
湿度敏感等级:3功能数量:1
端子数量:84字数:16777216 words
字数代码:16000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:16MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA84,10X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
电源:1.8 V认证状态:Not Qualified
座面最大高度:1.2 mm子类别:Other Memory ICs
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
宽度:8 mmBase Number Matches:1

S71WS256PD0HF3SR2 数据手册

 浏览型号S71WS256PD0HF3SR2的Datasheet PDF文件第2页浏览型号S71WS256PD0HF3SR2的Datasheet PDF文件第3页浏览型号S71WS256PD0HF3SR2的Datasheet PDF文件第4页浏览型号S71WS256PD0HF3SR2的Datasheet PDF文件第5页浏览型号S71WS256PD0HF3SR2的Datasheet PDF文件第6页浏览型号S71WS256PD0HF3SR2的Datasheet PDF文件第7页 
S71WS-P based MCP Products  
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode  
Flash Memory with CellularRAM  
S71WS-P based MCP Products Cover Sheet  
Data Sheet (Advance Information)  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. Each product described herein may be designated as Advance Information,  
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.  
Publication Number S71WS-P_00 Revision A Amendment 2 Issue Date August 21, 2006  

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