是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-56 |
针数: | 56 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.71 |
风险等级: | 5.05 | 其他特性: | PSRAM IS ORGANIZED AS 1M X 16 |
JESD-30 代码: | R-PBGA-B56 | JESD-609代码: | e1 |
长度: | 9 mm | 内存密度: | 33554432 bit |
内存集成电路类型: | MEMORY CIRCUIT | 内存宽度: | 16 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端子数量: | 56 | 字数: | 2097152 words |
字数代码: | 2000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 2MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 3.1 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 40 | 宽度: | 7 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S71GL032NA0BFW0U2 | SPANSION |
获取价格 |
Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA56, 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA | |
S71GL032NA0BFW0U3 | SPANSION |
获取价格 |
Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA56, 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA | |
S71GL032NA0BFW0Z0 | SPANSION |
获取价格 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM | |
S71GL032NA0BFW0Z2 | SPANSION |
获取价格 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM | |
S71GL032NA0BFW0Z3 | SPANSION |
获取价格 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM | |
S71GL032NA0BHW0B2 | CYPRESS |
获取价格 |
Memory Circuit, Flash+PSRAM, CMOS, PBGA56, | |
S71GL032NA0BHW0K0 | CYPRESS |
获取价格 |
Memory IC | |
S71GL032NA0BHW0K2 | CYPRESS |
获取价格 |
Memory IC | |
S71GL032NA0BHW0K3 | CYPRESS |
获取价格 |
Memory IC | |
S71GL032NA0BHW0P2 | CYPRESS |
获取价格 |
Memory IC |