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S70FL01GSAGMFI011 PDF预览

S70FL01GSAGMFI011

更新时间: 2024-11-20 19:55:03
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟光电二极管内存集成电路
页数 文件大小 规格书
19页 345K
描述
Flash, 1GX1, PDSO16, SOIC-16

S70FL01GSAGMFI011 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOP, SOP16,.4Reach Compliance Code:compliant
HTS代码:8542.32.00.51风险等级:2.11
Samacsys Description:Flash,1Gbit,SPI,133MHz,3V,SOIC16 S70FL01GSAGMFI011, SPI Flash Memory, 1024M x 1 bit 1Gbit, 2.7 → 3.6 V, 16-Pin, SOIC最大时钟频率 (fCLK):133 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G16长度:10.3 mm
内存密度:1073741824 bit内存集成电路类型:FLASH
内存宽度:1功能数量:1
端子数量:16字数:1073741824 words
字数代码:1000000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1GX1封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP16,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:2.65 mm串行总线类型:SPI
最大待机电流:0.0002 A子类别:Flash Memories
最大压摆率:0.1 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
类型:NOR TYPE宽度:7.5 mm
写保护:HARDWARE/SOFTWAREBase Number Matches:1

S70FL01GSAGMFI011 数据手册

 浏览型号S70FL01GSAGMFI011的Datasheet PDF文件第2页浏览型号S70FL01GSAGMFI011的Datasheet PDF文件第3页浏览型号S70FL01GSAGMFI011的Datasheet PDF文件第4页浏览型号S70FL01GSAGMFI011的Datasheet PDF文件第5页浏览型号S70FL01GSAGMFI011的Datasheet PDF文件第6页浏览型号S70FL01GSAGMFI011的Datasheet PDF文件第7页 
S70FL01GS  
1 Gbit (128 Mbyte) 3.0V SPI Flash  
Features  
CMOS 3.0V Core  
Security Features  
Serial Peripheral Interface (SPI) with Multi-I/O  
– SPI Clock polarity and phase modes 0 and 3  
– Double Data Rate (DDR) option  
One Time Program (OTP) array of 2048 bytes  
Block Protection  
– Status Register bits to control protection against program  
or erase of a contiguous range of sectors.  
– Hardware and software control options  
– Advanced Sector Protection (ASP)  
– Individual sector protection controlled by boot code or  
password  
– Extended Addressing: 32-bit address  
– Serial Command set and footprint compatible with  
S25FL-A, S25FL-K, and S25FL-P SPI families  
– Multi I/O Command set and footprint compatible with  
S25FL-P SPI family  
Cypress® 65 nm MirrorBit® Technology with Eclipse  
READ Commands  
– Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad  
Architecture  
DDR  
Core Supply Voltage: 2.7V to 3.6V  
I/O Supply Voltage: 1.65V to 3.6V  
Temperature Range / Grade:  
– AutoBoot – power up or reset and execute a Normal or  
Quad read command automatically at a preselected  
address  
– Common Flash Interface (CFI) data for configuration  
information  
– Industrial (40 °C to +85 °C)  
– Industrial Plus (40 °C to +105 °C)  
– Automotive, AEC-Q100 Grade 3 (40 °C to +85 °C)  
– Automotive, AEC-Q100 Grade 2 (40 °C to +105 °C)  
– Automotive, AEC-Q100 Grade 1 (40 °C to +125 °C)  
Packages (all Pb-free)  
Programming (1.5 Mbytes/s)  
– 512-byte Page Programming buffer  
– Quad-Input Page Programming (QPP) for slow clock  
systems  
– 16-lead SOIC (300 mils)  
– BGA-24, 8 6 mm  
Erase (0.5 Mbytes/s)  
– Uniform 256-kbyte sectors  
Cycling Endurance  
– 5 5 ball (ZSA024) footprint  
– 100,000 Program-Erase Cycles, minimum  
Data Retention  
– 20 Year Data Retention, minimum  
General Description  
This document contains information for the S70FL01GS device, which is a dual die stack of two S25FL512S die. For detailed  
specifications, refer to the discrete die datasheet provided in the Affected Documents/Related Documents table.  
Affected Documents/Related Documents  
Document Title  
Publication Number  
S25FL512S 512 Mbit (64 Mbyte) 3.0V SPI Flash Memory Datasheet  
001-98284  
Cypress Semiconductor Corporation  
Document Number: 001-98295 Rev. *M  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised June 23, 2017  
 
 
 
 

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