Datasheet > S60D100C-LF

S60D100C-LF

更新时间： 2024-11-01 15:50:23

品牌	Logo	应用领域
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页数	文件大小	规格书
4页	44K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-3P, 3 PIN

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S60D100C-LF 数据手册

S60D30C – S60D100C

60A DUAL SCHOTTKY BARRIER RECTIFIER

WON-TOP ELECTRONICS

Features



Schottky Barrier Chip



Guard Ring for Transient Protection

Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Current Capability

Epoxy Meets UL 94V-0 Classification

Ideally Suited for Use in High Frequency

SMPS, Inverters and As Free Wheeling Diodes

TO-3P

Dim

Min

1.85

4.70

—

Max

2.15

5.30

23.00

—

19.00

2.80

0.45

—

PIN1

3.20

0.85

16.20

2.70

3.65 Ø

4.50

5.65

1.40

2.50

12.70

6.00

1.70

3.15 Ø

—

Mechanical Data



Case: TO-3P, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-750, Method 2026

Polarity: See Diagram

Weight: 5.6 grams (approx.)

5.25

1.10

—

11.70

5.00



All Dimensions in mm

Mounting Position: Any

Mounting Torque: 1.2 N.m Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1

PIN 3

PIN 2

Case

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

S60D S60D S60D S60D S60D S60D S60D S60D

Characteristic

Symbol

Unit

30C

35C

40C

45C

50C

60C

80C 100C

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 100°C

Total Device

Per Diode

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed

on Rated Load (JEDEC Method)

IFSM

VFM

350

Forward Voltage per diode @I_F= 30A, T_J= 25°C

@I_F= 30A, T_J= 125°C

0.65

0.55

0.75

0.65

0.85

0.75

Peak Reverse Current

At Rated DC Blocking Voltage

@T_J= 25°C

@T_J= 100°C

1.0

IRM

Typical Junction Capacitance (Note 1)

1500

1100

Thermal Resistance Junction to Ambient per diode

Thermal Resistance Junction to Case per diode

RθJA

RθJC

1.0

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Revision: September, 2012

www.wontop.com

12 3 4

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