5秒后页面跳转
S60D150C PDF预览

S60D150C

更新时间: 2024-11-07 14:53:03
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 43K
描述
Powerpack

S60D150C 数据手册

 浏览型号S60D150C的Datasheet PDF文件第2页浏览型号S60D150C的Datasheet PDF文件第3页浏览型号S60D150C的Datasheet PDF文件第4页 
®
S60D150C – S60D200C  
60A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
H
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Current Capability  
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
TO-3P  
Dim  
A
B
C
D
E
Min  
1.85  
4.70  
Max  
2.15  
5.30  
23.00  
S
R
L
J
K
19.00  
2.80  
0.45  
PIN1  
2
3
3.20  
0.85  
16.20  
2.70  
3.65 Ø  
4.50  
5.65  
1.40  
2.50  
12.70  
6.00  
P
G
H
J
1.70  
3.15 Ø  
Mechanical Data  
N
K
L
Case: TO-3P, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-750, Method 2026  
Polarity: See Diagram  
Weight: 5.6 grams (approx.)  
M
N
P
5.25  
1.10  
M
A
R
S
11.70  
5.00  
B
All Dimensions in mm  
Mounting Position: Any  
Mounting Torque: 1.2 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
C
PIN 1  
PIN 3  
PIN 2  
Case  
G
D
E
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
S60D150C  
S60D200C  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
150  
105  
200  
140  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
60  
30  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
VFM  
350  
A
V
Forward Voltage per diode  
@IF = 30A, TJ = 25°C  
@IF = 30A, TJ = 125°C  
0.95  
0.85  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
0.5  
20  
IRM  
CJ  
mA  
pF  
Typical Junction Capacitance (Note 1)  
600  
Thermal Resistance Junction to Ambient per diode  
Thermal Resistance Junction to Case per diode  
RθJA  
RθJC  
40  
1.4  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

与S60D150C相关器件

型号 品牌 获取价格 描述 数据表
S60D200C WON-TOP

获取价格

Powerpack
S60D30 MOSPEC

获取价格

SCHOTTKY BARRIER RECTIFIERS(60A,30-60V)
S60D30APT CHENMKO

获取价格

Rectifier Diode,
S60D30C WTE

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 30V V(RRM), Silicon, TO-3P, 3 PIN
S60D30C WON-TOP

获取价格

Powerpack
S60D30CE MOSPEC

获取价格

Schottky Barrier Rectifiers
S60D30CPT CHENMKO

获取价格

Rectifier Diode,
S60D30DPT CHENMKO

获取价格

Rectifier Diode,
S60D30GPC CHENMKO

获取价格

Rectifier Diode,
S60D30PT CHENMKO

获取价格

SCHOTTKY BARRIER RECTIFIER